IS45S16400J-6TLA2
| Part Description |
IC DRAM 64MBIT PAR 54TSOP II |
|---|---|
| Quantity | 497 Available (as of May 4, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Mbit | Access Time | 5.4 ns | Grade | Automotive | ||
| Clock Frequency | 166 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 105°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 4M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of IS45S16400J-6TLA2 – IC DRAM 64Mbit Parallel, 54‑TSOP II
The IS45S16400J-6TLA2 is a 64 Mbit SDRAM organized as 4M × 16 with a parallel memory interface. It implements volatile DRAM memory technology and is supplied in a 54‑lead TSOP II package.
Key characteristics include a 166 MHz clock frequency, 5.4 ns access time, a 3.0 V to 3.6 V supply range, and an operating temperature range of −40 °C to 105 °C, making it suitable for systems that require compact parallel SDRAM in a small footprint package.
Key Features
- Memory Type SDRAM volatile memory, 64 Mbit capacity organized as 4M × 16 for parallel data paths.
- Performance Supports a clock frequency of 166 MHz with an access time of 5.4 ns for fast parallel read/write operations.
- Interface & Organization Parallel memory interface with a 4M × 16 organization to match 16‑bit data buses.
- Power Voltage supply range of 3.0 V to 3.6 V.
- Package Delivered in a 54‑lead TSOP II package (54‑TSOP, 0.400" / 10.16 mm width) for space‑conscious board layouts.
- Operating Range Rated for operation from −40 °C to 105 °C (TA).
- Supplier Manufactured by ISSI (Integrated Silicon Solution Inc.).
Typical Applications
- Parallel memory subsystems Provides 64 Mbit SDRAM storage for systems that require a parallel DRAM interface and 16‑bit data paths.
- Embedded devices with tight board space 54‑TSOP II package offers a compact form factor for memory expansion in space‑constrained designs.
- Systems requiring extended temperature operation −40 °C to 105 °C rating supports deployment in environments with wide ambient temperature ranges.
Unique Advantages
- Parallel 16‑bit organization: 4M × 16 arrangement aligns with 16‑bit data buses to simplify data path implementation.
- High operating frequency: 166 MHz clock support combined with a 5.4 ns access time enables faster parallel memory transactions.
- Wide supply tolerance: 3.0 V to 3.6 V supply range supports common 3 V class system voltages.
- Compact TSOP II package: 54‑lead TSOP (0.400", 10.16 mm width) reduces board area for memory placement.
- Extended temperature rating: −40 °C to 105 °C operation for use in applications with broader thermal requirements.
Why Choose IS45S16400J-6TLA2?
The IS45S16400J-6TLA2 delivers a straightforward parallel SDRAM solution with a 64 Mbit capacity, 4M × 16 organization, and performance parameters (166 MHz clock, 5.4 ns access time) suited to designs needing compact, high‑speed volatile memory. Its 54‑lead TSOP II package and extended temperature range support integration into space‑constrained and thermally demanding applications.
Manufactured by ISSI, the device provides a specific and verifiable set of electrical and mechanical characteristics for engineers designing parallel‑bus memory subsystems, enabling predictable implementation and board‑level planning.
Request a quote or contact sales to discuss availability, pricing, and lead times for the IS45S16400J-6TLA2.
