IS45S16400J-6TLA1
| Part Description |
IC DRAM 64MBIT PAR 54TSOP II |
|---|---|
| Quantity | 246 Available (as of May 6, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Mbit | Access Time | 5.4 ns | Grade | Industrial | ||
| Clock Frequency | 166 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 4M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of IS45S16400J-6TLA1 – IC DRAM 64MBIT PAR 54TSOP II
The IS45S16400J-6TLA1 is a 64 Mbit SDRAM organized as 4M × 16 with a parallel memory interface in a 54‑TSOP II surface-mount package. It provides volatile DRAM storage with defined timing and electrical characteristics for systems requiring parallel SDRAM memory.
Key operational parameters include a 166 MHz clock frequency, 5.4 ns access time, a supply voltage range of 3.0 V to 3.6 V, and an operating temperature range of −40°C to 85°C, enabling predictable performance across a range of environments.
Key Features
- Memory Architecture — 64 Mbit SDRAM organized as 4M × 16 with a parallel interface for straightforward memory mapping.
- Performance — Rated for a 166 MHz clock frequency and 5.4 ns access time to support fast read/write operations.
- Voltage — Operates from 3.0 V to 3.6 V to match 3V-class system rails.
- Package — 54‑TSOP II (0.400", 10.16 mm width) surface-mount package for compact board-level integration.
- Temperature Range — Specified operating temperature from −40°C to 85°C (TA) for extended environmental tolerance.
- Memory Type — Volatile DRAM format suitable for temporary data storage and buffering.
Typical Applications
- System Memory — Use as parallel SDRAM for temporary program or data storage in designs requiring a 4M × 16 organization.
- High-Speed Data Buffering — Suitable for buffering and frame storage where 166 MHz clocking and 5.4 ns access time are required.
- Compact PCB Designs — 54‑TSOP II package supports integration in space-constrained board layouts.
Unique Advantages
- Deterministic Parallel Interface: 4M × 16 organization provides predictable memory mapping for system designers.
- Measurable Timing: 166 MHz clock and 5.4 ns access time give clear performance parameters for system timing budgets.
- Wide Supply Range: 3.0 V to 3.6 V operation aligns with common 3V-class power rails.
- Extended Operating Temperature: −40°C to 85°C rating supports deployment across diverse thermal environments.
- Compact Surface-Mount Package: 54‑TSOP II package (10.16 mm width) simplifies board integration in compact designs.
Why Choose IS45S16400J-6TLA1?
The IS45S16400J-6TLA1 is positioned as a straightforward, specification-driven SDRAM option for designs that need a documented 64 Mbit, 4M × 16 parallel memory solution. Its defined clocking (166 MHz), access time (5.4 ns), supply range (3.0 V–3.6 V) and operating temperature (−40°C to 85°C) support reliable integration and predictable system behavior.
This device is suitable for engineers and procurement teams seeking a compact 54‑TSOP II packaged DRAM with clear electrical and thermal limits to support design verification and long-term deployment planning.
Request a quote or contact sales to discuss pricing, availability, and integration details for IS45S16400J-6TLA1.
