IS45S16400J-6CTLA1-TR

IC DRAM 64MBIT PAR 54TSOP II
Part Description

IC DRAM 64MBIT PAR 54TSOP II

Quantity 544 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package54-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size64 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency166 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging54-TSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization4M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of IS45S16400J-6CTLA1-TR – 64 Mbit SDRAM, 54‑TSOP II

The IS45S16400J-6CTLA1-TR is a 64 Mbit volatile DRAM organized as 4M × 16 and implemented in SDRAM architecture with a parallel memory interface. It targets applications requiring mid-density synchronous DRAM with defined timing and operating envelopes.

Designed for systems that require a 3.0–3.6 V supply, 166 MHz clock operation and compact board footprint, the device provides deterministic access timing for embedded, industrial and consumer designs that use parallel SDRAM memory.

Key Features

  • Memory Architecture 64 Mbit DRAM organized as 4M × 16 with a parallel SDRAM interface suitable for synchronous memory applications.
  • Performance Operates at a 166 MHz clock frequency with an access time of 5.4 ns, providing defined read/write timing for synchronous designs.
  • Power Supply Specified for operation from 3.0 V to 3.6 V, enabling compatibility with standard 3.3 V system rails.
  • Temperature Range Rated for operation from −40°C to 85°C (TA), supporting extended-temperature applications.
  • Package Supplied in a 54‑TSOP II package (54‑TSOP, 0.400" / 10.16 mm width) for a compact board-level footprint.
  • Memory Type Volatile DRAM (SDRAM) intended for systems requiring synchronous dynamic memory management.

Typical Applications

  • Embedded Systems Used as system memory in embedded controllers and processors that require synchronous parallel DRAM storage.
  • Consumer Electronics Appropriate for consumer devices that integrate mid-density SDRAM for temporary data buffering and working memory.
  • Industrial Equipment Suitable for industrial control and instrumentation where the −40°C to 85°C operating range is required.

Unique Advantages

  • Clear timing specification Provided 5.4 ns access time and 166 MHz clock rating allow predictable memory timing for synchronous designs.
  • Standard 3.3 V operation 3.0–3.6 V supply range aligns with common system voltages, simplifying power-supply design.
  • Compact TSOP II package 54‑TSOP II packaging delivers a small board footprint for space-constrained layouts.
  • Extended temperature support −40°C to 85°C operating range enables deployment in environments with wide temperature variation.
  • Parallel SDRAM organization 4M × 16 organization provides straightforward integration into parallel memory buses.

Why Choose IS45S16400J-6CTLA1-TR?

The IS45S16400J-6CTLA1-TR delivers a balanced combination of mid-range capacity, defined synchronous timing and a compact 54‑TSOP II package. Its 4M × 16 organization, 166 MHz clock rating and 5.4 ns access time make it suitable for designs that need predictable SDRAM performance within a common 3.0–3.6 V power envelope.

This device is well suited for engineers and procurement teams building embedded, consumer or industrial systems that require reliable volatile memory with extended-temperature capability and a compact board footprint.

Request a quote or submit an inquiry for IS45S16400J-6CTLA1-TR to receive pricing and availability information.

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