IS45S16400J-6TLA2-TR
| Part Description |
IC DRAM 64MBIT PAR 54TSOP II |
|---|---|
| Quantity | 670 Available (as of May 6, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Mbit | Access Time | 5.4 ns | Grade | Automotive | ||
| Clock Frequency | 166 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 105°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 4M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of IS45S16400J-6TLA2-TR – IC DRAM 64MBIT PAR 54TSOP II
The IS45S16400J-6TLA2-TR is a 64 Mbit synchronous DRAM (SDRAM) device organized as 4M × 16 with a parallel memory interface. It provides up to 166 MHz clock operation and is offered in a compact 54‑TSOP II (0.400", 10.16 mm width) package.
This device is targeted at designs requiring on-board parallel SDRAM capacity with defined electrical and thermal ranges, including applications where compact board-level memory and wide operating temperature are important.
Key Features
- Memory Type & Organization 64 Mbit SDRAM organized as 4M × 16 for parallel memory implementations.
- Performance Supports a clock frequency of 166 MHz with an access time of 5.4 ns for responsive read/write operations.
- Voltage Supply Operates from 3.0 V to 3.6 V, matching common 3 V SDRAM power rails.
- Package Supplied in a 54‑TSOP II (0.400", 10.16 mm width) package suitable for space‑constrained board designs.
- Interface Parallel memory interface compatible with standard parallel SDRAM bus architectures.
- Operating Temperature Rated for −40 °C to 105 °C ambient (TA), supporting a wide thermal range.
Typical Applications
- Parallel memory interfacing — Designed for systems that require a parallel SDRAM interface with a 4M × 16 organization for working memory or buffering.
- Compact board‑level memory — 54‑TSOP II package enables integration of 64 Mbit SDRAM in space‑constrained designs.
- Wide temperature designs — −40 °C to 105 °C rating supports applications needing extended ambient temperature operation.
Unique Advantages
- Predictable timing performance — 166 MHz clock frequency combined with a 5.4 ns access time provides defined timing characteristics for system design.
- Standardized memory organization — 4M × 16 arrangement simplifies address/data mapping for parallel SDRAM controllers.
- Broad voltage range — 3.0 V to 3.6 V operation fits common 3 V power domains for straightforward integration.
- Compact package option — 54‑TSOP II footprint helps minimize PCB area for applications with limited space.
- Extended temperature capability — −40 °C to 105 °C rating supports deployment across a wide range of ambient conditions.
Why Choose IC DRAM 64MBIT PAR 54TSOP II?
The IS45S16400J-6TLA2-TR delivers a compact, parallel SDRAM solution with clearly specified electrical and thermal characteristics. Its 64 Mbit density, 4M × 16 organization and 166 MHz clock capability make it suitable for designs that require defined memory timing and a small package footprint.
Offered by Integrated Silicon Solution Inc (ISSI), this device is appropriate for engineers and procurement teams specifying board‑level SDRAM where space, supply voltage and extended ambient temperature are key constraints.
Request a quote or contact sales to discuss availability, lead times and pricing for the IS45S16400J-6TLA2-TR.
