IS45S16400J-7BLA1-TR

IC DRAM 64MBIT PAR 54TFBGA
Part Description

IC DRAM 64MBIT PAR 54TFBGA

Quantity 595 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package54-TFBGA (8x8)Memory FormatDRAMTechnologySDRAM
Memory Size64 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency143 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging54-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization4M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of IS45S16400J-7BLA1-TR – IC DRAM 64MBIT PAR 54TFBGA

The IS45S16400J-7BLA1-TR is a 64 Mbit parallel DRAM device manufactured by ISSI (Integrated Silicon Solution Inc). It implements SDRAM technology in a 4M × 16 organization to provide high-speed volatile memory for systems requiring parallel SDRAM.

Key attributes include a 143 MHz clock capability, 5.4 ns access time, a 54‑TFBGA (8×8) package, and an operating range of −40°C to 85°C, making it suitable for designs that need compact, board-mounted parallel DRAM with defined electrical and thermal limits.

Key Features

  • Memory Technology & Type SDRAM volatile memory providing 64 Mbit total capacity in a 4M × 16 organization.
  • Performance Supports a clock frequency of 143 MHz with an access time of 5.4 ns for responsive read/write operations.
  • Interface Parallel memory interface suitable for systems that require external parallel DRAM connectivity.
  • Power Operates from 3.0 V to 3.6 V supply voltage.
  • Package 54‑TFBGA (8×8) supplier device package for compact board footprint and BGA mounting.
  • Temperature Range Rated for operation from −40°C to 85°C (TA).

Typical Applications

  • Parallel memory expansion — Provides 64 Mbit of parallel SDRAM capacity in systems that require a 4M × 16 memory organization.
  • High-speed buffering — 143 MHz clocking and 5.4 ns access time support use as transient data buffers or working memory in performance-sensitive subsystems.
  • Compact board-level memory — 54‑TFBGA (8×8) package enables dense PCB implementations where board space is constrained.
  • Industrial-temperature designs — −40°C to 85°C operating range addresses applications requiring extended ambient temperature support.

Unique Advantages

  • Defined SDRAM performance: 143 MHz clock and 5.4 ns access time deliver quantifiable timing characteristics for system-level memory planning.
  • Cohesive memory organization: 4M × 16 arrangement simplifies address and data bus design for parallel memory systems.
  • Board-friendly BGA package: 54‑TFBGA (8×8) minimizes PCB footprint while providing a reliable soldered connection.
  • Wide supply tolerance: 3.0 V to 3.6 V operation supports designs with standard 3.3 V supply rails and modest tolerance margins.
  • Extended operating temperature: −40°C to 85°C rating supports deployments across a broad ambient temperature range.

Why Choose IC DRAM 64MBIT PAR 54TFBGA?

IS45S16400J-7BLA1-TR is positioned for applications that require a compact, parallel SDRAM device with clearly specified timing, voltage, and temperature characteristics. Its 4M × 16 organization, 143 MHz clock capability, and 54‑TFBGA package make it suitable for designs where board space, predictable performance, and industrial temperature range are priorities.

This device is appropriate for engineers and procurement teams needing verifiable electrical and thermal specifications from a known manufacturer (ISSI) to support system memory architecture and integration planning.

Request a quote or contact sales to discuss availability, lead times, and pricing for IS45S16400J-7BLA1-TR.

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