IS45S16400J-7BLA1

IC DRAM 64MBIT PAR 54TFBGA
Part Description

IC DRAM 64MBIT PAR 54TFBGA

Quantity 24 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package54-TFBGA (8x8)Memory FormatDRAMTechnologySDRAM
Memory Size64 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency143 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging54-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization4M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of IS45S16400J-7BLA1 – 64 Mbit SDRAM, Parallel Interface, 54-TFBGA

The IS45S16400J-7BLA1 is a 64 Mbit volatile SDRAM device organized as 4M × 16 and implemented as synchronous DRAM with a parallel memory interface. It provides defined timing characteristics with a clock frequency of 143 MHz and an access time of 5.4 ns.

Packaged in a 54-TFBGA (8×8) case, the device operates from 3.0 V to 3.6 V and supports an ambient operating temperature range of −40°C to 85°C, suitable for designs requiring compact parallel DRAM memory.

Key Features

  • Memory Core and Organization 64 Mbit SDRAM arranged as 4M × 16, providing parallel DRAM storage in a single component.
  • Performance Synchronous operation with a clock frequency of 143 MHz and an access time of 5.4 ns.
  • Interface Parallel memory interface for direct bus access.
  • Power Supply voltage range of 3.0 V to 3.6 V.
  • Package 54-TFBGA package case (8×8) for compact board integration.
  • Operating Temperature −40°C to 85°C ambient temperature range.
  • Memory Format Volatile DRAM.

Unique Advantages

  • Parallel interface compatibility: Direct support for parallel memory bus architectures simplifies integration where a parallel DRAM is required.
  • Defined timing performance: 5.4 ns access time and 143 MHz clock frequency provide clear timing parameters for system-level memory design.
  • Flexible supply window: 3.0 V to 3.6 V operation accommodates systems operating within that voltage range.
  • Extended temperature range: Rated for −40°C to 85°C ambient operation for deployments requiring a wide operating temperature.
  • Compact BGA footprint: 54-TFBGA (8×8) packaging reduces PCB area for designs constrained by board space.

Why Choose IS45S16400J-7BLA1?

The IS45S16400J-7BLA1 combines a compact 54-TFBGA package with defined SDRAM performance—64 Mbit capacity, 4M × 16 organization, 143 MHz clocking, and 5.4 ns access time—making it suitable for designs that require a parallel DRAM memory element with predictable timing and constrained board footprint. Its 3.0 V–3.6 V supply range and −40°C to 85°C operating range address common power and environmental envelopes encountered in many electronic systems.

Manufactured by ISSI (Integrated Silicon Solution Inc), the device is appropriate for engineers and procurement teams evaluating parallel SDRAM options where the specified capacity, package, timing, and power/temperature characteristics match project requirements.

Request a quote or submit an inquiry for IS45S16400J-7BLA1 to check availability and pricing for your design requirements.

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