IS45S16400J-6BLA2-TR

IC DRAM 64MBIT PARALLEL 54TFBGA
Part Description

IC DRAM 64MBIT PARALLEL 54TFBGA

Quantity 1,643 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package54-TFBGA (8x8)Memory FormatDRAMTechnologySDRAM
Memory Size64 MbitAccess Time5.4 nsGradeAutomotive
Clock Frequency166 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 105°C (TA)Write Cycle Time Word PageN/APackaging54-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization4M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of IS45S16400J-6BLA2-TR – IC DRAM 64MBIT PARALLEL 54TFBGA

The IS45S16400J-6BLA2-TR is a 64 Mbit volatile SDRAM device organized as 4M × 16 with a parallel memory interface. It delivers synchronous DRAM operation with a specified clock frequency of 166 MHz and an access time of 5.4 ns.

Designed for board-level integration where compact package, defined performance and industrial temperature operation are required, the device supports 3.0 V to 3.6 V supply levels and is offered in a 54‑TFBGA (8×8) package.

Key Features

  • Memory Core  64 Mbit SDRAM organized as 4M × 16, volatile DRAM format for system memory and buffer applications.
  • Performance  Synchronous SDRAM operation with a clock frequency up to 166 MHz and an access time of 5.4 ns for deterministic timing.
  • Voltage Supply  Operates from 3.0 V to 3.6 V, matching common 3 V system rails.
  • Package  54‑TFBGA (8×8) supplier device package for compact board footprint and BGA assembly.
  • Operating Temperature  Rated for −40 °C to 105 °C (TA), supporting extended temperature operation.
  • Interface  Parallel memory interface suitable for synchronous DRAM bus architectures.

Typical Applications

  • Board-level system memory  Use as on-board SDRAM for designs requiring a 4M × 16 parallel memory organization and 64 Mbit capacity.
  • Frame buffering and data buffering  Provides deterministic SDRAM access (166 MHz clock, 5.4 ns access) for intermediate data storage and buffering tasks.
  • Compact embedded modules  The 54‑TFBGA (8×8) package enables integration into space-constrained PCBs requiring parallel SDRAM.

Unique Advantages

  • Defined SDRAM performance: 166 MHz clock frequency and 5.4 ns access time deliver predictable synchronous memory timing for system designers.
  • Compact BGA footprint: 54‑TFBGA (8×8) package reduces board area while supporting standard BGA assembly processes.
  • Wide operating temperature: −40 °C to 105 °C rating supports deployment in extended temperature environments.
  • Standard 3 V supply: 3.0 V to 3.6 V range aligns with common 3 V system power rails, simplifying power supply design.
  • Parallel SDRAM organization: 4M × 16 layout provides a clear memory map for bus-oriented memory architectures.

Why Choose IC DRAM 64MBIT PARALLEL 54TFBGA?

The IS45S16400J-6BLA2-TR positions itself as a compact, spec-driven SDRAM option for systems needing 64 Mbit of parallel volatile memory with defined timing and industrial temperature range. Its 4M × 16 organization, 166 MHz clock capability and 5.4 ns access time make it suitable for designs that require predictable synchronous memory behavior and a small BGA footprint.

Engineers specifying this device benefit from a straightforward supply voltage range (3.0 V–3.6 V) and a 54‑TFBGA package option for space-conscious PCBs, delivering a balance of performance, integration and thermal tolerance for long-term deployments.

Request a quote or submit a sales inquiry to receive pricing and availability information for the IS45S16400J-6BLA2-TR.

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