IS45S16400J-6BLA1

IC DRAM 64MBIT PARALLEL 54TFBGA
Part Description

IC DRAM 64MBIT PARALLEL 54TFBGA

Quantity 370 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package54-TFBGA (8x8)Memory FormatDRAMTechnologySDRAM
Memory Size64 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency166 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging54-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization4M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of IS45S16400J-6BLA1 – IC DRAM 64MBIT PARALLEL 54TFBGA

The IS45S16400J-6BLA1 is a 64 Mbit volatile SDRAM organized as 4M × 16 with a parallel memory interface. It provides synchronous DRAM operation with a 166 MHz clock rate and fast access performance for designs that require compact, board-mounted parallel memory.

Packaged in a 54‑TFBGA (8×8) form factor and specified for operation from −40°C to 85°C, this device is intended for systems that demand a compact parallel DRAM solution with standard 3.0–3.6 V supply requirements.

Key Features

  • Memory Capacity and Organization  64 Mbit capacity organized as 4M × 16 for 16‑bit parallel data paths.
  • SDRAM Technology  Synchronous DRAM architecture for clocked, predictable memory access.
  • Performance  Rated clock frequency of 166 MHz with an access time of 5.4 ns for low-latency operations.
  • Voltage Supply  Operates from 3.0 V to 3.6 V, matching common 3 V system supplies.
  • Package  54‑TFBGA (8×8) package case suitable for surface-mount PCB assembly.
  • Operating Temperature  Specified operating ambient temperature range: −40°C to 85°C (TA).
  • Interface  Parallel memory interface for direct integration with parallel memory controllers and buses.

Typical Applications

  • Embedded memory expansion  Integrate as board-level parallel SDRAM to provide 64 Mbit of volatile storage for embedded systems.
  • High-speed buffering  Use as a parallel buffer or scratch memory where 166 MHz clocking and 5.4 ns access time meet throughput needs.
  • Compact PCB designs  The 54‑TFBGA (8×8) package enables higher density memory placement in space-constrained assemblies.

Unique Advantages

  • Clear memory organization: 4M × 16 configuration simplifies integration with 16‑bit data buses and existing parallel memory controllers.
  • Measured performance: 166 MHz clock frequency and 5.4 ns access time provide defined timing characteristics for system timing analysis.
  • Standard 3 V supply: 3.0–3.6 V operating range aligns with common system power rails.
  • Wide ambient temperature support: −40°C to 85°C rating accommodates designs operating across broad temperature ranges.
  • Compact BGA footprint: 54‑TFBGA (8×8) package reduces PCB area for memory placement while supporting surface-mount assembly.

Why Choose IS45S16400J-6BLA1?

The IS45S16400J-6BLA1 delivers a straightforward, specification-driven SDRAM option for designs that require 64 Mbit of parallel volatile memory with defined timing and electrical characteristics. Its 4M × 16 organization, 166 MHz clock rating, and 5.4 ns access time make it suitable for systems that need predictable synchronous memory performance.

This device is appropriate for engineers and procurement teams seeking a compact BGA-packaged SDRAM compatible with 3.0–3.6 V systems and an ambient operating range from −40°C to 85°C, providing a balance of capacity, performance, and board-area efficiency.

Request a quote or submit an inquiry for pricing and availability of the IS45S16400J-6BLA1 to support your design and production timelines.

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