IS45S16400F-7TLA1-TR
| Part Description |
IC DRAM 64MBIT PAR 54TSOP II |
|---|---|
| Quantity | 1,604 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Mbit | Access Time | 5.4 ns | Grade | Industrial | ||
| Clock Frequency | 143 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 4M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of IS45S16400F-7TLA1-TR – IC DRAM 64MBIT PAR 54TSOP II
The IS45S16400F-7TLA1-TR is a 64‑Mbit synchronous DRAM organized as 1,048,576 × 16 × 4 banks. It implements a fully synchronous pipeline architecture with a parallel LVTTL interface and is specified for a 3.3 V single power supply.
This device targets designs requiring a compact 54‑pin TSOP II memory package with support for programmable burst lengths, programmable CAS latency, self‑refresh and auto‑refresh modes. The -7 speed grade supports a 143 MHz clock and an access time of 5.4 ns (CAS latency = 3), with an industrial operating temperature range of -40 °C to +85 °C.
Key Features
- Core / Memory Organization — 64 Mbit SDRAM organized as 1,048,576 × 16 × 4 banks for improved command/row management and throughput.
- Performance — Speed grade -7 supports a 143 MHz clock with a 5.4 ns access time at CAS latency = 3; programmable CAS latency options of 2 or 3 clocks.
- Burst and Sequencing — Programmable burst length (1, 2, 4, 8, full page) and selectable burst sequence (sequential or interleave) with burst termination support.
- Refresh and Power Management — Auto refresh (CBR), self‑refresh modes and 4096 refresh cycles per refresh interval (64 ms for commercial/industrial grades; A2 grade option with 16 ms available per datasheet).
- Interface — Parallel LVTTL interface with random column address every clock cycle; supports burst read/write and burst read/single write operations.
- Supply and Voltage — Single 3.3 V power supply; specified operating supply range 3.0 V to 3.6 V.
- Package and Temperature — 54‑pin TSOP II (0.400", 10.16 mm width) package; industrial temperature range of -40 °C to +85 °C (TA) documented in product data.
- Internal Bank Management — Internal bank architecture for hiding row access/precharge latency to improve effective throughput.
Unique Advantages
- Flexible timing configuration: Programmable CAS latency and burst lengths allow tuning for system timing and throughput tradeoffs.
- Compact footprint: 54‑pin TSOP II package provides a small physical solution for space‑constrained PCBs while preserving a 16‑bit data bus.
- Industrial temperature support: Rated for -40 °C to +85 °C, enabling use in temperature‑sensitive embedded and industrial applications.
- Single 3.3 V supply: Simplifies power rail requirements and integration into 3.3 V system architectures.
- Built‑in refresh and self‑refresh: Auto and self‑refresh modes reduce external refresh management overhead in system designs.
Why Choose IS45S16400F-7TLA1-TR?
The IS45S16400F-7TLA1-TR delivers a balanced combination of synchronous SDRAM performance and compact packaging for designs that require 64 Mbit of parallel memory in a TSOP II footprint. With programmable timing, burst modes and internal bank management, it offers configuration flexibility for systems prioritizing controlled latency and predictable throughput.
This device is suited to engineers specifying a 3.3 V single‑supply SDRAM with industrial temperature capability and a small 54‑pin package. The documented refresh, burst and CAS options provide clear tradeoffs for integration into embedded and industrial memory subsystems.
Request a quote or submit an RFQ to obtain pricing, lead time and detailed ordering information for IS45S16400F-7TLA1-TR.