IS45S16400F-7BLA2

The IS45S16400F-7BLA2 is a 64 Mbit synchronous DRAM organized as 1,048,576 × 16 × 4 banks. It provides parallel SDRAM architecture with a single 3.3 V supply and is optimized for synchronous, clock-referenced memory operations.

Designed for systems that require fast, pipelined burst access, this device delivers programmable burst lengths and CAS latency options to match a range of timing and throughput requirements while supporting extended operating temperatures.

Key Features

• Memory Organization  1,048,576 bits × 16 × 4 banks (4M × 16) delivering 64 Mbit total DRAM capacity in a parallel interface.
• High-speed Synchronous SDRAM  Fully synchronous operation with inputs and outputs referenced to the rising edge of the clock; part -7 speed grade supports a 143 MHz clock frequency and 5.4 ns access time (CAS latency = 3).
• Programmable Burst and Access Control  Programmable burst lengths (1, 2, 4, 8, full page) and burst sequence (sequential/interleave); burst read/write and burst read/single write supported with burst termination commands.
• CAS Latency Options  Selectable CAS latency of 2 or 3 clocks to balance latency and throughput requirements.
• Refresh and Self-Refresh  Auto refresh (CBR) and self-refresh modes supported; refresh count options include 4K cycles per 64 ms or 16 ms depending on device grade.
• Voltage and Signal Interface  Single 3.3 V (3.0 V–3.6 V) supply with LVTTL interface signaling.
• Package and Mounting  Supplied in a 54-ball TFBGA (8 mm × 8 mm) 54-TFBGA package for board-level surface mounting.
• Extended Temperature Range  Specified operating temperature from −40 °C to +105 °C (TA).

Typical Applications

• Board-level system memory  For designs requiring a 64 Mbit parallel SDRAM with 3.3 V supply and synchronous burst operation.
• Embedded controllers and processors  Provides pipelined, high-speed memory for embedded systems that require programmable burst lengths and CAS latency options.
• Industrial and temperature-challenged systems  Suitable where operation across −40 °C to +105 °C is required and a compact 54-TFBGA package is preferred.

Unique Advantages

• Flexible timing configuration  Programmable CAS latency (2 or 3) and multiple burst length/sequence options allow designers to tune performance to system timing.
• High-speed synchronous operation  Clock-referenced, pipelined architecture supports random column access every clock cycle for efficient data throughput at the specified clock frequency.
• Compact BGA footprint  54-TFBGA (8×8 mm) package minimizes PCB area while enabling surface-mount assembly in space-constrained designs.
• Robust refresh control  Auto refresh and self-refresh modes with selectable refresh intervals provide reliable data retention management across device grades.
• Wide supply tolerance  Operates from 3.0 V to 3.6 V, accommodating common 3.3 V system rails and variation in supply conditions.

Why Choose IS45S16400F-7BLA2?

The IS45S16400F-7BLA2 delivers a practical combination of synchronous DRAM performance, configurable timing, and a compact 54-TFBGA package for systems that need 64 Mbit of parallel memory. Its programmable burst behavior, CAS latency options, and self-refresh capabilities make it suitable for designs that require adaptable memory timing and reliable refresh control across extended temperature ranges.

This device is appropriate for engineers and procurement teams seeking a 3.3 V parallel SDRAM solution with clear timing specifications, a defined speed grade (143 MHz for the -7 variant), and board-level packaging for surface-mount assembly.

If you need pricing, availability, or a formal quotation for IS45S16400F-7BLA2, submit a request for a quote or contact the supplier’s sales channel to receive product and ordering information.