IS45S16400F-7TLA2

The IS45S16400F-7TLA2 is a 64‑Mbit synchronous DRAM (SDRAM) organized as 1,048,576 bits × 16 × 4 banks. It implements a fully synchronous, pipelined architecture with a parallel memory interface designed for high‑speed data transfer.

Specified for operation from 3.0 V to 3.6 V and an ambient temperature range of −40°C to 105°C (TA), this device targets systems that require compact, low‑voltage parallel DRAM in a 50‑TSOP II package.

Key Features

• Core / Architecture  Fully synchronous SDRAM with internal bank architecture to hide row access/precharge and support pipeline operation for high‑speed transfers.
• Memory Organization & Size  64 Mbit organized as 1,048,576 × 16 × 4 banks (4M × 16 logical organization).
• Performance  Clock frequency rated at 143 MHz with an access time from clock of 5.4 ns (CAS‑latency = 3 option).
• Programmable Burst & Latency  Programmable burst lengths (1, 2, 4, 8, full page) and burst sequence (Sequential/Interleave); CAS latency programmable for 2 or 3 clocks.
• Refresh and Self‑Refresh  Supports auto refresh (CBR) and self‑refresh modes; 4096 refresh cycles every 64 ms (commercial/industrial/A1) or 16 ms (A2 grade) as specified in device options.
• Interface & Signaling  Parallel memory interface with LVTTL‑compatible signaling and random column address capability every clock cycle.
• Power  Single‑supply operation across 3.0 V to 3.6 V.
• Package & Mounting  50‑TSOP II package (0.400" / 10.16 mm width) for compact board-level integration.
• Operating Temperature  Specified ambient temperature range: −40°C to 105°C (TA).

Typical Applications

• High‑speed parallel memory subsystems  Use as synchronous DRAM where pipelined, parallel access and programmable burst modes are required for sustained data throughput.
• Embedded processing platforms  Local DRAM for processors or controllers needing 64‑Mbit of volatile storage with selectable CAS latency and burst behavior.
• Industrial electronics  Systems operating across extended ambient temperatures that require a compact TSOP II memory package with self‑refresh and auto‑refresh support.

Unique Advantages

• Compact 50‑TSOP II footprint: Enables dense board layouts while providing 64 Mbit of SDRAM in a slim package (0.400" / 10.16 mm width).
• Flexible timing and burst control: Programmable burst lengths and CAS latency (2 or 3 clocks) allow tuning for performance and system timing constraints.
• Banked internal architecture: Four internal banks improve effective throughput by allowing bank interleaving and hiding row access/precharge overhead.
• Robust refresh options: Auto refresh (CBR) and self‑refresh modes with defined refresh cycle options for different operating grades help maintain data integrity.
• Wide supply range: 3.0 V to 3.6 V operation supports typical 3.3 V system rails without additional power domain complexity.
• Deterministic synchronous interface: All inputs and outputs referenced to the rising clock edge for predictable timing in synchronous designs.

Why Choose IS45S16400F-7TLA2?

The IS45S16400F-7TLA2 delivers a balanced combination of synchronous SDRAM performance, flexible burst and timing options, and a compact 50‑TSOP II package for systems requiring 64‑Mbit of parallel volatile memory. Its banked architecture and programmable modes enable designers to optimize throughput and latency to match application needs.

This device is suited for designs that demand a low‑voltage 3.0–3.6 V SDRAM solution with self‑refresh and auto‑refresh capabilities and operation across an extended ambient temperature range. It provides a predictable, board‑level memory option where controlled timing and compact packaging are important.

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