IS45S16400F-7BLA2-TR

The IS45S16400F-7BLA2-TR is a 64‑Mbit synchronous DRAM organized as 1,048,576 × 16 × 4 banks, provided in a 54‑ball TFBGA (8 × 8 mm) package. It implements a fully synchronous architecture with internal banking, programmable burst operation and selectable CAS latency to support predictable, clock‑referenced memory access.

Designed for parallel SDRAM interfaces, the device operates from a single 3.3 V supply (3.0 V–3.6 V) and targets systems that require deterministic synchronous DRAM behavior with support for self‑refresh and automatic refresh modes.

Key Features

• Core / Memory Architecture — Organized as 4M × 16 with 4 internal banks (1,048,576 × 16 × 4) for improved access parallelism and row‑access hiding.
• Synchronous SDRAM — Fully synchronous operation with all signals referenced to the rising clock edge for deterministic timing.
• Performance — –7 speed grade provides a clock frequency option of 143 MHz and an access time from clock of 5.4 ns (CAS latency = 3).
• Programmable Burst and Latency — Programmable burst lengths (1, 2, 4, 8, full page), sequential or interleaved burst sequence and selectable CAS latency (2 or 3 clocks) to match system timing and throughput needs.
• Refresh and Low‑Power Modes — Supports self‑refresh and auto‑refresh (CBR) with 4096 refresh cycles per 64 ms (or 16 ms for A2 grade as specified in the datasheet).
• Interface and Supply — Parallel memory interface with LVTTL signaling and single 3.3 V power supply range (3.0 V–3.6 V).
• Package and Temperature — 54‑TFBGA (8 × 8 mm) package; specified operating temperature range −40 °C to +105 °C (TA) for demanding thermal environments.

Unique Advantages

• Multi‑bank architecture: Four internal banks and hidden row access reduce row‑cycle overhead and improve effective data throughput for burst transfers.
• Flexible burst control: Programmable burst lengths and sequence modes let designers optimize transfers for sequential or random access patterns.
• Adjustable latency: Selectable CAS latency (2 or 3 clocks) enables tradeoffs between access timing and clock frequency to fit system timing constraints.
• Straightforward power and signaling: Single 3.3 V supply (3.0 V–3.6 V) and LVTTL interface simplify power rail and I/O design.
• Wide operating temperature: Rated for −40 °C to +105 °C (TA), accommodating applications with extended ambient temperature requirements.
• Compact BGA package: 54‑ball TFBGA (8 × 8 mm) offers a small footprint for space‑constrained PCBs.

Why Choose IS45S16400F-7BLA2-TR?

The IS45S16400F-7BLA2-TR provides a deterministic synchronous DRAM solution with programmable burst behavior, selectable CAS latency and multi‑bank organization to support systems that require predictable, clock‑driven memory access. Its 143 MHz (–7) speed grade with a 5.4 ns access time (CAS = 3) offers a clear performance point for parallel SDRAM interfaces.

With a single 3.3 V supply, LVTTL signaling, compact 54‑TFBGA package and a −40 °C to +105 °C operating range, this device is suited for designs that need a compact 64‑Mbit SDRAM component with configurable timing and refresh features to match system requirements.

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