IS45S16400F-7BLA1-TR

The IS45S16400F-7BLA1-TR is a 64‑Mbit synchronous DRAM (SDRAM) organized as 1,048,576 × 16 × 4 banks. It implements a fully synchronous pipeline architecture with an internal bank structure to hide row access/precharge and uses a parallel LVTTL interface.

This device targets systems that require a single 3.3 V supply (operating range 3.0–3.6 V), a compact 54‑TFBGA (8×8) package, and an industrial operating temperature range of −40°C to +85°C. The −7 speed grade supports a 143 MHz clock with 5.4 ns access time and programmable timing and burst options for flexible throughput/latency tradeoffs.

Key Features

• Memory architecture — 64 Mbit organized as 1M × 16 × 4 banks, providing multi‑bank operation for improved access concurrency.
• Performance & timing — −7 speed grade supports a 143 MHz clock and 5.4 ns access time; programmable CAS latency of 2 or 3 clocks.
• Burst and sequencing — Programmable burst lengths (1, 2, 4, 8, full page) and selectable burst sequence (sequential or interleave); supports burst termination by burst stop and precharge commands.
• Refresh and low‑power modes — Auto refresh (CBR) and self‑refresh support; 4096 refresh cycles per 64 ms for Commercial/Industrial/A1 grades as specified.
• Interface — Parallel LVTTL interface with random column address capability every clock cycle for sustained read performance.
• Power — Single 3.3 V supply with operating range 3.0–3.6 V.
• Package and temperature — 54‑TFBGA (54‑ball FBGA, 8 mm × 8 mm) in a device rated for −40°C to +85°C (TA).
• System efficiency — Internal bank architecture and synchronous pipeline design reduce row access/precharge overhead.

Typical Applications

• Embedded systems — External SDRAM storage for embedded controllers and modules that require a 64‑Mbit parallel memory with industrial temperature capability.
• Consumer and industrial electronics — Parallel SDRAM for devices operating from a 3.3 V rail where programmable burst and CAS timing provide flexible throughput tuning.
• Networking and communications modules — Buffering and temporary storage where random column access every clock cycle and multi‑bank operation improve sustained data throughput.

Unique Advantages

• Flexible timing and burst configuration: Programmable CAS latency (2 or 3) and multiple burst length/sequence options let designers optimize for latency or throughput.
• Compact BGA footprint: 54‑TFBGA (8×8) package minimizes PCB area while providing a ball grid array mounting for reliable assembly.
• Single‑rail power simplicity: Operates from a single 3.3 V supply (3.0–3.6 V range), simplifying power‑rail requirements in system designs.
• Industrial temperature support: Rated for −40°C to +85°C (TA) to extend suitability across temperature‑varying deployments.
• Banked architecture for improved throughput: Four internal banks and a fully synchronous pipeline design reduce row‑cycle overhead during sustained access patterns.

Why Choose IS45S16400F-7BLA1-TR?

The IS45S16400F-7BLA1-TR is positioned for designs that need a compact, parallel SDRAM solution with flexible timing and burst options, single‑supply operation, and industrial temperature range. Its 1M × 16 × 4 bank organization and synchronous pipeline architecture support sustained access patterns while providing configuration options to balance latency and throughput.

Choose this device for systems requiring a 64‑Mbit SDRAM in a 54‑TFBGA package with programmable refresh, burst, and CAS settings—delivering a verifiable and configurable memory building block suitable for embedded, consumer, and communication applications.

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