IS45S16320F-6TLA1
| Part Description |
IC DRAM 512MBIT PAR 54TSOP II |
|---|---|
| Quantity | 398 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 16 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 5.4 ns | Grade | Industrial | ||
| Clock Frequency | 167 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 32M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0028 |
Overview of IS45S16320F-6TLA1 – IC DRAM 512Mbit PAR 54TSOP II
The IS45S16320F-6TLA1 is a 512 Mbit volatile SDRAM device organized as 32M × 16 with a parallel DRAM interface. It provides synchronous DRAM performance with specified clock and access timing for systems that require mid-density, parallel memory.
Designed for board-level memory integration, the device combines a 54‑TSOP II package profile with a 3.0 V to 3.6 V supply range and an extended ambient operating temperature range of −40 °C to 85 °C.
Key Features
- Memory Technology SDRAM volatile memory in a parallel DRAM format for synchronous operation.
- Capacity & Organization 512 Mbit capacity organized as 32M × 16, delivering a straightforward, word-oriented memory layout.
- Performance Specified clock frequency of 167 MHz and access time of 5.4 ns for synchronous data transactions.
- Interface Parallel memory interface suitable for systems expecting 16-bit data width.
- Voltage Supply Operates from 3.0 V to 3.6 V, matching common 3 V-class memory power rails.
- Package 54‑TSOP II package (0.400", 10.16 mm width) for compact board-level mounting.
- Operating Temperature Rated for −40 °C to 85 °C (TA) to support designs with extended ambient requirements.
Typical Applications
- Parallel memory subsystems Provides 512 Mbit of synchronous parallel DRAM capacity where 32M × 16 organization and 167 MHz operation are required.
- Embedded system memory Used to add volatile SDRAM storage for embedded designs that need a 16‑bit memory interface and mid-density capacity.
- Designs requiring extended temperature range Suitable for systems that require operation across −40 °C to 85 °C.
Unique Advantages
- 512 Mbit density in a compact package: Delivers significant memory capacity in a 54‑TSOP II footprint to conserve PCB area.
- Synchronous SDRAM operation: 167 MHz clocking and a 5.4 ns access time enable predictable, timed data transfers.
- Standard 3 V supply compatibility: Operates from 3.0 V to 3.6 V, aligning with common system rails for straightforward power integration.
- Parallel 16‑bit organization: 32M × 16 layout simplifies bus integration where a 16‑bit data path is required.
- Extended ambient rating: −40 °C to 85 °C qualification supports a broad range of environmental conditions.
Why Choose IC DRAM 512MBIT PAR 54TSOP II?
The IS45S16320F-6TLA1 combines 512 Mbit SDRAM capacity, a 32M × 16 organization, and synchronous operation at 167 MHz in a compact 54‑TSOP II package. Its electrical and thermal specifications (3.0 V–3.6 V supply and −40 °C to 85 °C ambient rating) make it well suited to designs that require reliable, board-mounted parallel DRAM memory with defined timing characteristics.
This device is a practical choice for engineers needing mid-density parallel SDRAM for embedded subsystems or other designs where a 16‑bit data path, defined access time, and compact package are primary considerations.
Request a quote or submit an inquiry to discuss availability, lead times, and pricing for the IS45S16320F-6TLA1.
