IS45S16320F-6BLA1-TR

IC DRAM 512MBIT PAR 54TFBGA
Part Description

IC DRAM 512MBIT PAR 54TFBGA

Quantity 406 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusActive
Manufacturer Standard Lead Time16 Weeks
Datasheet

Specifications & Environmental

Device Package54-TW-BGA (8x13)Memory FormatDRAMTechnologySDRAM
Memory Size512 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency167 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging54-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization32M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0028

Overview of IS45S16320F-6BLA1-TR – IC DRAM 512MBIT PAR 54TFBGA

The IS45S16320F-6BLA1-TR is a volatile SDRAM device providing 512 Mbit of parallel memory organized as 32M × 16. It implements a parallel SDRAM architecture with a 54-TFBGA package (54-TW-BGA, 8×13) intended for systems that require external parallel DRAM memory.

Key measurable characteristics include a 167 MHz clock frequency, 5.4 ns access time, a 3.0 V to 3.6 V supply range, and an operating ambient temperature range of −40°C to 85°C.

Key Features

  • Memory Core 512 Mbit SDRAM organized as 32M × 16 for parallel memory applications.
  • Performance Rated clock frequency of 167 MHz with a specified access time of 5.4 ns for predictable timing characteristics.
  • Interface Parallel memory interface suitable for systems requiring standard DRAM bus connectivity.
  • Power Supply voltage range of 3.0 V to 3.6 V to match common 3 V-class system rails.
  • Package 54-TFBGA package (supplier device package: 54-TW-BGA, 8×13) for BGA mounting in dense board designs.
  • Environmental Range Operating ambient temperature range from −40°C to 85°C (TA) for extended-temperature applications.
  • Memory Type Volatile DRAM format designed for external system memory, buffering, and working storage.

Typical Applications

  • Parallel memory subsystems — Provides 512 Mbit of external parallel SDRAM for systems that require a dedicated DRAM interface.
  • Embedded controllers and processors — Acts as external working memory where a 32M × 16 parallel organization is required.
  • Industrial and commercial equipment — The −40°C to 85°C operating range supports deployment in temperature-variable environments.

Unique Advantages

  • Clear density and organization: 512 Mbit capacity arranged as 32M × 16 simplifies memory mapping and integration decisions.
  • Defined timing performance: 167 MHz clock rating and 5.4 ns access time provide measurable timing parameters for system timing budgets.
  • 3 V supply compatibility: 3.0 V–3.6 V supply range aligns with common 3 V-class system power rails.
  • BGA package for compact boards: 54-TFBGA (54-TW-BGA, 8×13) supports high-density PCB layouts and surface-mount assembly.
  • Extended operating temperature: −40°C to 85°C ambient range enables use in a variety of temperature environments.

Why Choose IS45S16320F-6BLA1-TR?

The IS45S16320F-6BLA1-TR positions itself as a straightforward parallel SDRAM option with explicit, verifiable specifications—512 Mbit density, 32M × 16 organization, 167 MHz clock rating, and a 5.4 ns access time—packaged in a 54-TFBGA form factor. These attributes make it suitable for designs that require a defined external DRAM footprint and predictable electrical and thermal operating points.

This device is appropriate for engineers and procurement teams specifying parallel SDRAM in embedded, industrial, or commercial system designs where the provided voltage range, package, and temperature ratings match system requirements.

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