IS45S16320D-7TLA2

IC DRAM 512MBIT PAR 54TSOP II
Part Description

IC DRAM 512MBIT PAR 54TSOP II

Quantity 438 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package54-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size512 MbitAccess Time5.4 nsGradeAutomotive
Clock Frequency143 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 105°C (TA)Write Cycle Time Word PageN/APackaging54-TSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization32M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0032

Overview of IS45S16320D-7TLA2 – IC DRAM 512MBIT PAR 54TSOP II

The IS45S16320D-7TLA2 is a 512 Mbit synchronous DRAM (SDRAM) device organized as 32M × 16. It implements a fully synchronous pipeline architecture with internal bank management to support high-speed, clock-referenced data transfers.

This parallel-interface SDRAM is suited to systems that require mid-density, high-throughput volatile memory in a 54-pin TSOP-II package, with a supply range centered around 3.3 V and an extended operating temperature down to −40°C up to 105°C.

Key Features

  • Memory Core  512 Mbit SDRAM organized as 32M × 16 bits with internal bank architecture to hide row access and precharge operations.
  • Performance  Supports a clock frequency option of 143 MHz (–7 speed grade) with programmable CAS latency (2 or 3 clocks) and an access time from clock of 5.4 ns.
  • Interface  Parallel memory interface with LVTTL signaling for synchronous operation; all inputs and outputs are referenced to the rising edge of the clock.
  • Burst and Sequencing  Programmable burst lengths (1, 2, 4, 8, full page) and programmable burst sequence (sequential or interleave) with burst termination options via burst stop and precharge commands.
  • Refresh and Power Management  Auto Refresh (CBR) and Self Refresh supported with 8K refresh cycles every 64 ms (standard refresh modes documented in the device specification).
  • Voltage and Power  Power supply range listed at 3.0 V to 3.6 V; S-type devices reference VDD/VDDQ = 3.3 V in the device specification.
  • Package and Temperature  Available in a 54-pin TSOP-II package (0.400", 10.16 mm width) with an operating ambient temperature range of −40°C to +105°C (TA).

Typical Applications

  • Parallel-memory system designs  Use as system memory where a 32M × 16 parallel SDRAM provides required volatile storage for mid-density applications.
  • High-speed buffering  Suitable for applications that need clock-referenced, pipelined data transfers and programmable burst behavior for short-term data buffering.
  • Embedded modules using TSOP-II footprint  Fits designs that require a 54-pin TSOP-II memory package with standard pinout and mechanical dimensions.
  • Temperature-demanding environments  Operates across a wide ambient range (−40°C to +105°C) for designs exposed to extended temperature conditions.

Unique Advantages

  • Balanced capacity and density: 512 Mbit organization in a 32M × 16 configuration provides ample volatile storage for mid-range memory requirements without moving to larger BGA packages.
  • Clock-referenced synchronous operation: All signals referenced to the rising edge of the clock enable predictable timing and pipelined high-speed transfers at the specified 143 MHz grade.
  • Flexible burst and latency control: Programmable burst lengths, burst sequence options and CAS latency settings allow tuning for throughput and latency trade-offs in system-level memory access.
  • Standard TSOP-II package: 54-pin TSOP-II footprint simplifies integration into existing board designs that require a small-outline parallel SDRAM package.
  • Extended operating temperature: Device specified to operate from −40°C to +105°C, supporting designs that must tolerate wide ambient temperature ranges.

Why Choose IS45S16320D-7TLA2?

The IS45S16320D-7TLA2 delivers a practical combination of 512 Mbit capacity, synchronous pipelined architecture, and flexible burst/latency options in a compact 54-pin TSOP-II package. Its 143 MHz speed grade, LVTTL-compatible parallel interface and internal bank management make it appropriate for designs that require predictable, clocked memory performance without migrating to larger-ball-count packages.

This part is well suited to engineers and procurement teams looking for a mid-density SDRAM solution that balances capacity, timing flexibility and a compact mechanical footprint while supporting a broad operating temperature range and standard supply voltages around 3.3 V.

Request a quote or submit an inquiry to receive pricing, availability and ordering information for IS45S16320D-7TLA2.

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