IS45S16320D-7TLA2
| Part Description |
IC DRAM 512MBIT PAR 54TSOP II |
|---|---|
| Quantity | 438 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 5.4 ns | Grade | Automotive | ||
| Clock Frequency | 143 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 105°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 32M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0032 |
Overview of IS45S16320D-7TLA2 – IC DRAM 512MBIT PAR 54TSOP II
The IS45S16320D-7TLA2 is a 512 Mbit synchronous DRAM (SDRAM) device organized as 32M × 16. It implements a fully synchronous pipeline architecture with internal bank management to support high-speed, clock-referenced data transfers.
This parallel-interface SDRAM is suited to systems that require mid-density, high-throughput volatile memory in a 54-pin TSOP-II package, with a supply range centered around 3.3 V and an extended operating temperature down to −40°C up to 105°C.
Key Features
- Memory Core 512 Mbit SDRAM organized as 32M × 16 bits with internal bank architecture to hide row access and precharge operations.
- Performance Supports a clock frequency option of 143 MHz (–7 speed grade) with programmable CAS latency (2 or 3 clocks) and an access time from clock of 5.4 ns.
- Interface Parallel memory interface with LVTTL signaling for synchronous operation; all inputs and outputs are referenced to the rising edge of the clock.
- Burst and Sequencing Programmable burst lengths (1, 2, 4, 8, full page) and programmable burst sequence (sequential or interleave) with burst termination options via burst stop and precharge commands.
- Refresh and Power Management Auto Refresh (CBR) and Self Refresh supported with 8K refresh cycles every 64 ms (standard refresh modes documented in the device specification).
- Voltage and Power Power supply range listed at 3.0 V to 3.6 V; S-type devices reference VDD/VDDQ = 3.3 V in the device specification.
- Package and Temperature Available in a 54-pin TSOP-II package (0.400", 10.16 mm width) with an operating ambient temperature range of −40°C to +105°C (TA).
Typical Applications
- Parallel-memory system designs Use as system memory where a 32M × 16 parallel SDRAM provides required volatile storage for mid-density applications.
- High-speed buffering Suitable for applications that need clock-referenced, pipelined data transfers and programmable burst behavior for short-term data buffering.
- Embedded modules using TSOP-II footprint Fits designs that require a 54-pin TSOP-II memory package with standard pinout and mechanical dimensions.
- Temperature-demanding environments Operates across a wide ambient range (−40°C to +105°C) for designs exposed to extended temperature conditions.
Unique Advantages
- Balanced capacity and density: 512 Mbit organization in a 32M × 16 configuration provides ample volatile storage for mid-range memory requirements without moving to larger BGA packages.
- Clock-referenced synchronous operation: All signals referenced to the rising edge of the clock enable predictable timing and pipelined high-speed transfers at the specified 143 MHz grade.
- Flexible burst and latency control: Programmable burst lengths, burst sequence options and CAS latency settings allow tuning for throughput and latency trade-offs in system-level memory access.
- Standard TSOP-II package: 54-pin TSOP-II footprint simplifies integration into existing board designs that require a small-outline parallel SDRAM package.
- Extended operating temperature: Device specified to operate from −40°C to +105°C, supporting designs that must tolerate wide ambient temperature ranges.
Why Choose IS45S16320D-7TLA2?
The IS45S16320D-7TLA2 delivers a practical combination of 512 Mbit capacity, synchronous pipelined architecture, and flexible burst/latency options in a compact 54-pin TSOP-II package. Its 143 MHz speed grade, LVTTL-compatible parallel interface and internal bank management make it appropriate for designs that require predictable, clocked memory performance without migrating to larger-ball-count packages.
This part is well suited to engineers and procurement teams looking for a mid-density SDRAM solution that balances capacity, timing flexibility and a compact mechanical footprint while supporting a broad operating temperature range and standard supply voltages around 3.3 V.
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