IS45S16320D-7CTLA2-TR

The IS45S16320D-7CTLA2-TR is a 512Mbit synchronous DRAM organized as 32M × 16 with a parallel memory interface. It implements a fully synchronous pipeline architecture with all signals referenced to the rising edge of the clock, delivering high-speed system memory for designs that require 512Mbit SDRAM capacity.

This device targets systems that need predictable, clocked DRAM behavior with programmable burst modes and CAS latency options, and provides performance and flexibility through features such as internal bank architecture, burst read/write support, and LVTTL signaling.

Key Features

• Memory Organization and Capacity — 512 Mbit total capacity arranged as 32M × 16, suitable for applications requiring a parallel 16-bit data path.
• High‑speed Synchronous Operation — Supports a clock frequency up to 143 MHz for the -7 speed grade with access time as low as 5.4 ns (CAS latency dependent).
• Flexible Burst and Latency — Programmable burst lengths (1, 2, 4, 8, full page) and programmable burst sequence (sequential/interleave); CAS latency selectable (2 or 3 clocks).
• Refresh and Power Modes — Auto Refresh (CBR) and Self Refresh supported with 8K refresh cycles every 64 ms to maintain data integrity.
• Interface — LVTTL-compatible signaling with a parallel SDRAM interface for standard synchronous memory integration.
• Voltage and Timing — Supply range listed as 3.0 V to 3.6 V; timing characterized for the -7 grade (CLK frequency 143 MHz, access times and CAS timing included).
• Internal Bank Architecture — Multiple internal banks for hiding row access/precharge and enabling pipelined operation.
• Package and Temperature — 54-pin TSOP-II (0.400", 10.16 mm width) package; operating temperature range specified as -40°C to +105°C (TA).

Typical Applications

• System Memory – Use as synchronous DRAM in designs requiring 512 Mbit of parallel memory with programmable burst and CAS settings.
• Embedded and Industrial Electronics – Suitable for systems that need extended ambient temperature operation (−40°C to +105°C) combined with a compact 54‑TSOP‑II package.
• High‑throughput Data Buffers – Applicable where pipelined, clock‑referenced transfers and internal bank architecture improve sustained data throughput.

Unique Advantages

• Deterministic Synchronous Interface: Fully synchronous operation with all signals referenced to the positive clock edge enables predictable timing and easier system integration.
• Speed‑grade Matching: The -7 grade is characterized for 143 MHz operation and 5.4 ns access timing, allowing designers to target specific performance bands.
• Programmable Data Transfer Modes: Multiple burst lengths and sequence options plus selectable CAS latency provide flexibility to optimize throughput and latency for system needs.
• Robust Refresh Support: Auto and self‑refresh modes with defined 8K/64 ms refresh cycles help maintain data integrity across power and temperature conditions.
• Compact, Industry‑Standard Package: 54-pin TSOP‑II footprint (10.16 mm width) simplifies PCB layout for space‑constrained designs requiring parallel x16 memory.
• Wide Operating Voltage Window: Specified supply range of 3.0 V to 3.6 V accommodates systems using standard 3.3 V power domains.

Why Choose IS45S16320D-7CTLA2-TR?

The IS45S16320D-7CTLA2-TR provides a clear combination of 512 Mbit capacity, 32M × 16 organization, and synchronous parallel operation tuned for 143 MHz performance. Its programmable burst modes, CAS latency options, and internal bank architecture make it suitable for designs that require flexible timing and sustained throughput.

This device is appropriate for engineers specifying compact, board‑level SDRAM in a 54‑TSOP‑II package with a 3.0–3.6 V supply and extended ambient temperature range, offering a focused set of features for predictable memory behavior in embedded and industrial applications.

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