IS45S16320D-7BLA2-TR

The IS45S16320D-7BLA2-TR is a 512 Mbit synchronous DRAM organized as 32M x 16 with a parallel memory interface. It implements a fully synchronous pipeline architecture with internal bank management to support high-speed, low-latency memory transactions.

This device is intended for designs requiring a compact 54‑ball TF‑BGA package, support for 143 MHz clocking (–7 timing grade), and operation across a wide voltage and temperature window for robust system integration.

Key Features

• Memory Architecture  512 Mbit SDRAM organized as 32M × 16 with internal bank architecture (4 banks) to hide row access/precharge and support pipelined operation.
• Performance  Supports a clock frequency up to 143 MHz (–7 grade) with typical access time from clock of 5.4 ns for CAS latency settings shown in the datasheet.
• Fully Synchronous Operation  All inputs and outputs are referenced to the rising edge of the clock for predictable timing and system synchronization.
• Burst and Latency Control  Programmable burst lengths (1, 2, 4, 8, full page) and burst sequence (sequential/interleave); programmable CAS latency of 2 or 3 clocks.
• Refresh and Self‑Refresh  Supports Auto Refresh and Self Refresh with 8K refresh cycles every 64 ms (standard refresh behavior documented in the datasheet).
• Voltage and I/O  VDD/VDDQ supply range listed as 3.0 V to 3.6 V with LVTTL-compatible interface signaling documented for the S family devices.
• Package and Mounting  54‑ball TF‑BGA (8 × 13) package optimized for board space with surface‑mount mounting type.
• Operating Temperature  Specified operating ambient temperature range: −40 °C to +105 °C (TA) as provided in the product specifications.

Typical Applications

• High‑speed data buffering  For designs needing a 512 Mbit parallel SDRAM with 143 MHz clocking and low access times for buffering data streams.
• Embedded memory subsystems  Use as local DRAM for embedded platforms that require a 32M × 16 memory organization and standard SDRAM control.
• Burst‑oriented memory operations  Suitable where programmable burst lengths and sequences are used to optimize block read/write throughput.

Unique Advantages

• Compact TF‑BGA footprint: Enables high-density board designs with the 54‑ball TF‑BGA (8×13) package while preserving parallel memory width.
• Configurable performance: Programmable CAS latency (2 or 3) and burst settings allow designers to tune latency and throughput to system requirements.
• Synchronous pipeline architecture: All signals referenced to the rising clock edge simplify timing closure and system-level clocking strategies.
• Robust refresh mechanisms: Auto Refresh and Self Refresh with documented refresh cycles (8K/64 ms) support reliable data retention in volatile operation.
• Wide operating conditions: Operates from 3.0 V to 3.6 V and across −40 °C to +105 °C ambient, supporting a broad range of thermal and power environments.

Why Choose IC DRAM 512MBIT PAR 54TFBGA?

The IS45S16320D-7BLA2-TR positions itself as a practical choice for systems requiring a 512 Mbit, 32M × 16 parallel SDRAM in a space‑efficient TF‑BGA package. Its fully synchronous pipeline design, programmable latency and burst options, and documented refresh behavior provide predictable performance for embedded memory subsystems and high‑throughput buffering tasks.

Designers needing a compact, parallel-interface SDRAM with specified timing (143 MHz / 5.4 ns access from clock), a defined voltage window, and broad ambient temperature range will find this device appropriate for integration into constrained board layouts and systems with explicit timing requirements.

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