IS45S16320D-7BLA1-TR

The IS45S16320D-7BLA1-TR is a 512Mbit synchronous DRAM device organized as 32M × 16 with an internal 4-bank architecture. It implements a fully synchronous, pipelined SDRAM interface designed for high-speed data transfer with signals referenced to the rising edge of the clock.

This parallel SDRAM is intended for systems requiring mid‑density, low-latency volatile memory with programmable burst control, selectable CAS latency, and standard LVTTL signaling. The device is packaged in a 54-ball TF‑BGA (8×13) suitable for compact board designs and operates across a wide voltage and temperature range.

Key Features

• Memory Capacity & Organization — 512 Mbit total, organized as 32M × 16 with 4 internal banks for parallel row/column operations.
• SDRAM Core & Timing — Fully synchronous SDRAM with selectable CAS latency (2 or 3 clocks) and an access time of 5.4 ns (CAS‑latency = 3, -7 speed grade).
• Clock Performance — Supports clock operation up to 143 MHz for the -7 speed grade (other speed grades listed in the datasheet include 166 and 200 MHz variants).
• Burst & Sequencing — Programmable burst lengths (1, 2, 4, 8, full page) and selectable burst sequence (sequential or interleave) for flexible data transfer patterns.
• Refresh & Power Modes — Auto Refresh and Self Refresh supported with 8K refresh cycles per 64 ms (standard refresh handling for SDRAM).
• Interface & Signaling — Parallel memory interface with LVTTL-compatible signaling for command/address/control inputs.
• Power Supply — Operates from a VDD/VDDQ range of 3.0 V to 3.6 V (S‑series typically 3.3 V nominal).
• Package & Mounting — 54-ball thin‑fine BGA (TF‑BGA), 8 × 13 ball array, surface mount package suitable for space‑constrained boards.
• Operating Temperature — Specified operating ambient range of −40 °C to +85 °C (TA).

Typical Applications

• Embedded system memory — Used as parallel SDRAM main or local memory for embedded processors requiring deterministic, synchronous access and burst transfers.
• High-speed buffering — Suitable for data buffering and temporary storage in systems that need mid‑density SDRAM and predictable latency.
• Consumer and industrial electronics — Integration into compact boards where a 54‑ball TF‑BGA footprint and industrial temperature range are required.

Unique Advantages

• Programmable performance profiles — Selectable CAS latency and burst modes let designers tune latency and throughput to match system timing requirements.
• Deterministic synchronous operation — Fully synchronous design with clock‑edge referenced signals simplifies timing analysis and system integration.
• Flexible burst control — Multiple burst lengths and sequencing options optimize block data transfers and reduce command overhead.
• Robust refresh management — Auto and self‑refresh support with defined 8K/64 ms refresh cycles help maintain data integrity with standard SDRAM refresh schemes.
• Wide operating conditions — Voltage range of 3.0 V–3.6 V and −40 °C to +85 °C ambient rating support a broad set of board‑level environments.
• Compact BGA footprint — 54‑ball TF‑BGA (8×13) enables high‑density PCB layouts while providing x16 data width.

Why Choose IS45S16320D-7BLA1-TR?

The IS45S16320D-7BLA1-TR delivers a balanced combination of mid‑density capacity, synchronous SDRAM timing, and flexible burst/cas options for designs that require predictable high‑speed parallel memory. Its 32M × 16 organization with 4 internal banks supports efficient row/column operations and burst transfers for typical embedded and buffering use cases.

Engineers specifying this part benefit from a standard LVTTL parallel interface, a compact 54‑ball TF‑BGA package, and a broad voltage and temperature operating window—making it suitable for compact board layouts and environments demanding industrial ambient ranges.

Request a quote or submit an inquiry for IS45S16320D-7BLA1-TR to obtain pricing and availability details.