IS45S16320D-7CTLA1

The IS45S16320D-7CTLA1 is a 512 Mbit synchronous DRAM (SDRAM) organized as 32M × 16 with a fully synchronous, pipelined architecture for high-speed data transfer. It implements parallel SDRAM interfaces and programmable timing features to support flexible memory performance in systems that require deterministic, clock-referenced DRAM behavior.

Designed and specified by Integrated Silicon Solution Inc., this device targets applications needing a parallel SDRAM device in a compact 54-pin TSOP-II package with industrial temperature support and a 3.0–3.6 V supply range.

Key Features

• Memory Capacity & Organization — 512 Mbit total capacity organized as 32M × 16.
• Synchronous Pipeline Architecture — Fully synchronous operation with all signals referenced to the positive clock edge and internal banking to hide row access/precharge.
• Clock & Timing — Supports up to 143 MHz clock frequency for the -7 speed grade with access times down to 5.4 ns and programmable CAS latency (2 or 3 clocks).
• Burst and Access Modes — Programmable burst lengths (1, 2, 4, 8, full page) and burst sequence (sequential/interleave); supports burst read/write and burst read/single write operations with burst termination options.
• Refresh and Retention — Auto Refresh and Self Refresh supported; 8K refresh cycles per 64 ms.
• Interface & Logic — LVTTL-compatible interface with parallel memory timing and random column address capability every clock cycle.
• Power — VDD/VDDQ operating range specified at 3.0 V to 3.6 V for the -S series device.
• Package & Mounting — 54-pin TSOP-II (0.400", 10.16 mm width) package, mounting type: surface mount.
• Operating Temperature — Industrial temperature range: -40°C to +85°C (TA).

Typical Applications

• High-speed memory subsystems — Use as a parallel SDRAM buffer where fully synchronous, clock-referenced DRAM with programmable burst behavior is required.
• Embedded systems — Provides 512 Mbit DRAM in a compact 54-pin TSOP-II package suitable for space-constrained designs that require parallel memory.
• Industrial temperature designs — Rated for -40°C to +85°C to support systems operating across extended temperature ranges.

Unique Advantages

• High-density 32M × 16 organization — Delivers 512 Mbit in a single-device footprint for simplified board-level memory architecture.
• Flexible performance tuning — Programmable CAS latency, burst length and sequence let designers optimize throughput and latency for target workloads.
• Pipelined synchronous operation — All signals referenced to the rising clock edge and internal bank architecture improve predictable high-speed data transfer.
• Retention and refresh management — Auto Refresh and Self Refresh modes with defined 8K/64 ms refresh cycles reduce system management overhead for data retention.
• Industrial-grade temperature range — Specified operation from -40°C to +85°C for deployment in temperature-sensitive environments.
• Compact TSOP-II package — 54-pin TSOP-II (10.16 mm width) provides a surface-mount option for compact system designs.

Why Choose IS45S16320D-7CTLA1?

IS45S16320D-7CTLA1 combines a 512 Mbit density with a fully synchronous, pipelined SDRAM architecture and programmable timing features to give designers control over performance and latency in parallel memory subsystems. Its 32M × 16 organization, support for burst modes, and internal bank management enable predictable, high-speed data transfers in compact TSOP-II form factor.

This device is suited for engineers specifying parallel SDRAM in designs that require industrial temperature operation and a 3.0–3.6 V supply window, offering a clear specification set for integration and long-term deployment where synchronous DRAM behavior is needed.

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