IS45S16320D-7TLA1

The IS45S16320D-7TLA1 is a 512 Mbit synchronous DRAM (SDRAM) organized as 32M × 16 with a parallel LVTTL interface. It uses a fully synchronous, pipeline architecture with internal bank management to accelerate row access and precharge operations.

Designed for systems requiring high-speed synchronous memory, the device offers programmable burst modes, selectable CAS latency, and built-in refresh mechanisms to support continuous operation across a broad temperature and supply range.

Key Features

• Memory Core  The device provides 512 Mbit SDRAM arranged as 32M × 16 with 4 internal banks for concurrent row management.
• Performance  Clock frequency option for the -7 part: 143 MHz; typical access time from clock: 5.4 ns (CAS latency = 3).
• Programmable Timing  Selectable CAS latency (2 or 3 clocks) and programmable burst lengths (1, 2, 4, 8, full page) with sequential or interleave burst sequencing.
• Refresh and Retention  Supports Auto Refresh (CBR) and Self Refresh modes; 8K refresh cycles every 64 ms as specified.
• Interface  Parallel memory interface with LVTTL signaling for input/output compatibility with common system designs.
• Power  Supply range: 3.0 V to 3.6 V (VDD/VDDQ); IS45S series specified for 3.3 V operation in datasheet extracts.
• Package  54‑pin TSOP‑II package (0.400", 10.16 mm width) in a compact surface‑mount form factor.
• Operating Range  Industrial temperature support from −40 °C to +85 °C (TA) for extended environmental operation.
• System Efficiency  Internal bank architecture and pipeline operation hide row access/precharge latency to improve effective throughput for burst transfers.

Unique Advantages

• Deterministic synchronous interface: Fully synchronous operation with clock-referenced inputs and outputs simplifies timing analysis and system integration.
• Configurable throughput: Programmable CAS latency and burst length/sequence options let designers balance latency and bandwidth to match application needs.
• Built-in refresh management: Auto and Self Refresh modes with 8K/64 ms refresh scheduling reduce external refresh handling requirements.
• Industrial temperature capability: Specified operation from −40 °C to +85 °C enables use in temperature-challenging environments.
• Space-efficient packaging: 54‑pin TSOP‑II package offers a compact footprint for board-level memory implementations.
• Standard power domain: 3.0–3.6 V supply compatibility aligns with common 3.3 V system power rails.

Why Choose IC DRAM 512MBIT PAR 54TSOP II?

The IS45S16320D-7TLA1 provides a straightforward, high-performance SDRAM solution for designs that require a parallel LVTTL memory interface, selectable timing modes, and reliable refresh mechanisms. Its pipeline architecture and internal bank management help maintain throughput during burst operations while offering predictable timing characteristics.

This device is well suited for projects needing a compact 54‑pin TSOP‑II packaged 512 Mbit SDRAM with industrial temperature support and a 3.0–3.6 V power envelope. Its configurable timing and burst options provide flexibility for a range of system memory requirements while reducing external control complexity.

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