IS45S16320D-7TLA2-TR

The IS45S16320D-7TLA2-TR is a 512Mbit synchronous DRAM (SDRAM) organized as 32M × 16 with a parallel memory interface. It implements a fully synchronous pipeline architecture with internal bank management to support high-throughput memory operations in systems that require discrete SDRAM devices.

Targeted for applications requiring a compact 54-pin TSOP-II footprint, this device delivers a 143 MHz clock frequency and a 5.4 ns access time (CAS latency depending on configuration), while operating from a 3.0 V to 3.6 V supply and across a broad temperature range.

Key Features

• Core Memory Architecture  512 Mbit SDRAM organized as 32M × 16 with internal banking to hide row access and precharge operations.
• Synchronous, High-Speed Operation  Fully synchronous design with signals referenced to the rising clock edge; specified for a 143 MHz clock frequency (–7 speed grade) and 5.4 ns access time.
• Flexible Burst and Latency Options  Programmable burst lengths (1, 2, 4, 8, full page) and burst sequence (sequential/interleave); programmable CAS latency options are supported.
• Refresh and Self-Refresh  Supports Auto Refresh (CBR), Self Refresh, and 8K refresh cycles per 64 ms to maintain data integrity.
• Interface  Parallel memory interface with LVTTL-compatible signaling for command and control.
• Power  Rated for VDD/VDDQ operation from 3.0 V to 3.6 V.
• Package  54-pin TSOP-II (0.400", 10.16 mm width) package suitable for compact board layouts; supplier device package listed as 54-TSOP II.
• Operating Temperature  Specified operating ambient temperature range of −40°C to +105°C (TA).

Typical Applications

• Embedded memory subsystems  Use as discrete SDRAM for systems requiring a parallel synchronous memory interface and compact TSOP-II packaging.
• Buffering and data staging  Suitable for applications that need burst-capable read/write operations and predictable CAS latency for data buffering.
• Industrial electronics  Applicable in designs where a wide operating temperature range and a 3.0–3.6 V supply are required.

Unique Advantages

• Predictable timing performance: 143 MHz clock speed and 5.4 ns access time (–7 grade) provide defined timing for system memory design and latency budgeting.
• Flexible data transfer modes: Programmable burst lengths and sequence options enable optimization for sequential or random access patterns.
• Robust refresh management: Auto and self-refresh support with 8K refresh cycles per 64 ms simplify retention control in active and low-power states.
• Wide supply compatibility: 3.0 V to 3.6 V VDD/VDDQ range supports common 3.3 V system rails.
• Compact board footprint: 54-pin TSOP-II package (10.16 mm width) enables memory integration on space-constrained PCBs.
• Broad ambient range: Specified operation from −40°C to +105°C (TA) addresses applications with elevated environmental requirements.

Why Choose IC DRAM 512MBIT PAR 54TSOP II?

The IS45S16320D-7TLA2-TR provides a synchronous, parallel 512 Mbit memory solution with defined timing (143 MHz, 5.4 ns) and flexible burst/latency configuration. Its combination of internal bank architecture, standard LVTTL interface, and comprehensive refresh features makes it suitable for designs that require predictable SDRAM behavior in a compact TSOP-II package.

This device is well suited to engineers specifying discrete SDRAM for embedded and industrial-grade systems that operate from 3.0–3.6 V and across a broad ambient temperature range. Its programmable transfer modes and refresh capabilities support a range of memory access patterns while simplifying system-level memory management.

Request a quote or submit a quotation request to obtain pricing and availability for the IS45S16320D-7TLA2-TR.