IS45S16160L-7TLA2

IC DRAM 256MBIT PAR 54TSOP II
Part Description

IC DRAM 256MBIT PAR 54TSOP II

Quantity 348 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusActive
Manufacturer Standard Lead Time12 Weeks
Datasheet

Specifications & Environmental

Device Package54-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size256 MbitAccess Time5.4 nsGradeAutomotive
Clock Frequency143 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 105°C (TA)Write Cycle Time Word PageN/APackaging54-TSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceLVTTLMemory Organization16M x 16
Moisture Sensitivity LevelN/ARoHS ComplianceUnknownREACH ComplianceREACH Unknown
QualificationN/AECCNN/AHTS CodeN/A

Overview of IS45S16160L-7TLA2 – 256 Mbit SDRAM, 16M × 16, 54-TSOP II

The IS45S16160L-7TLA2 is a volatile SDRAM device delivering 256 Mbit of DRAM organized as 16M × 16. It implements synchronous DRAM architecture with a parallel LVTTL interface and a rated clock frequency of 143 MHz.

Offered in a compact 54-TSOP II package and specified for an ambient temperature range of -40°C to 105°C and a supply range of 3.0–3.6 V, this device targets systems requiring mid-density synchronous DRAM memory in space-constrained board designs.

Key Features

  • Memory Core 256 Mbit DRAM organized as 16M × 16, providing mid-range capacity in a single-chip solution.
  • SDRAM Technology Synchronous DRAM architecture with a clock frequency rating of 143 MHz for timed, synchronous access.
  • Performance Specified access time of 5.4 ns supports responsive read/write cycles appropriate for synchronous memory applications.
  • Interface & Logic Levels Parallel LVTTL memory interface for standard logic-level signaling in compatible designs.
  • Power Supply voltage range 3.0–3.6 V, enabling operation within common 3 V SRAM/DRAM power domains.
  • Package 54-TSOP II (0.400", 10.16 mm width) package for compact board footprint and surface-mount assembly.
  • Operating Environment Rated ambient temperature range from -40°C to 105°C (TA) for deployment across a wide thermal envelope.

Unique Advantages

  • Mid-density single-chip solution: 256 Mbit capacity in a 16M × 16 organization reduces the number of devices required for this memory capacity.
  • Synchronous operation at 143 MHz: Enables deterministic, clocked memory transfers suitable for synchronous system architectures.
  • Fast access time: 5.4 ns access time supports responsive memory transactions tied directly to the device specification.
  • Compact 54-TSOP II package: Small surface-mount footprint facilitates higher board density and simplified routing.
  • Wide supply and temperature ranges: 3.0–3.6 V supply and -40°C to 105°C ambient rating support robust operation across varied power and thermal conditions.
  • Standard LVTTL signaling: Simplifies interfacing with compatible digital logic levels in target systems.

Why Choose IS45S16160L-7TLA2?

The IS45S16160L-7TLA2 positions itself as a straightforward, specification-driven SDRAM option for designs that require 256 Mbit of synchronous DRAM in a compact surface-mount package. Its 16M × 16 organization, 143 MHz clock rating, and 5.4 ns access time provide clear, verifiable performance characteristics for deterministic memory subsystems.

With a 54-TSOP II package, LVTTL interface, a 3.0–3.6 V supply window, and an ambient temperature range of -40°C to 105°C, this device is suited to applications where mid-density synchronous memory, compact footprint, and defined electrical/thermal operating points are primary selection criteria.

Request a quote or submit an inquiry for pricing and availability of the IS45S16160L-7TLA2 to obtain lead-time and order information.

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