IS45S16160L-7TLA1-TR

The IS45S16160L-7TLA1-TR is a 256 Mbit SDRAM device organized as 16M × 16, supplied in a 54‑lead TSOP II package. It provides volatile high-density DRAM storage with a LVTTL interface and is specified for operation from 3.0 V to 3.6 V.

Designed for integration where external SDRAM is required, the device offers a 143 MHz clock rate and a 5.4 ns access time, delivering predictable timing and compact board-level packaging for space-constrained designs. The device is rated for operation across an extended temperature range of −40 °C to 85 °C.

Key Features

• Memory  256 Mbit capacity organized as 16M × 16, providing a wide parallel data path for external memory expansion.
• SDRAM Technology  Synchronous DRAM architecture with a specified clock frequency of 143 MHz to support timed burst access patterns.
• Performance  5.4 ns access time for predictable read latency in time-sensitive memory operations.
• Interface  LVTTL memory interface signaling for compatibility with standard logic-level host controllers.
• Voltage  Supply voltage range of 3.0 V to 3.6 V to match common 3 V SDRAM system rails.
• Package  54‑lead TSOP II (0.400", 10.16 mm width) surface-mount package for compact board-level integration.
• Operating Temperature  Specified ambient operating range of −40 °C to 85 °C for deployment across extended-temperature environments.

Typical Applications

• External SDRAM expansion  Provides 256 Mbit volatile memory capacity for systems that require a parallel SDRAM device.
• Board-level memory integration  TSOP II packaging enables compact placement on PCBs where a 54‑lead footprint is required.
• Systems with 3 V supply rails  Operates from 3.0 V to 3.6 V, matching common 3 V SDRAM power domains.

Unique Advantages

• High-density 16M × 16 organization: Delivers 256 Mbit in a single device to reduce component count compared with lower-density DRAM parts.
• Synchronous operation at 143 MHz: Supports timed SDRAM transactions and burst access patterns for predictable throughput.
• Low-latency access: 5.4 ns access time provides deterministic read performance for memory-critical tasks.
• Standard LVTTL signaling: Simplifies interface design with common logic-level controllers.
• Compact TSOP II package: 54‑lead, 0.400" (10.16 mm) width package supports dense board layouts where space is limited.
• Extended temperature range: −40 °C to 85 °C rating enables use in applications requiring wider ambient temperature tolerance.

Why Choose IS45S16160L-7TLA1-TR?

The IS45S16160L-7TLA1-TR combines 256 Mbit SDRAM density, synchronous operation, and a 16M × 16 organization to provide a straightforward external memory solution for systems using 3 V supply rails. Its 143 MHz clock specification and 5.4 ns access time deliver consistent timing characteristics for designs that require predictable SDRAM performance.

With a compact 54‑lead TSOP II package and an operating range from −40 °C to 85 °C, this device is suited for board-level integration where footprint and temperature tolerance are important. It is appropriate for designers and procurement teams specifying a 256 Mbit SDRAM device with LVTTL signaling and standard 3 V power requirements.

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