IS45S16800E-6BLA1

The IS45S16800E-6BLA1 is a 128 Mbit synchronous DRAM (SDRAM) from Integrated Silicon Solution Inc. It implements a quad-bank, pipeline architecture with a parallel memory interface and LVTTL signaling to deliver high-speed synchronous data transfers.

Designed for systems that require a 128Mbit SDRAM organized as 8M × 16, this device supports programmable burst lengths and CAS latencies to match a range of timing and throughput requirements while operating across a 3.0–3.6 V supply range and an operating temperature of −40 °C to +85 °C (TA).

Key Features

• Core / Memory Organization — 128 Mbit total capacity organized as 8M × 16 with a quad-bank internal configuration for parallel bank operation.
• Synchronous SDRAM Architecture — Fully synchronous operation with all inputs and outputs referenced to the positive clock edge; pipeline architecture for high-speed transfers.
• Performance — Supports a clock frequency up to 166 MHz (‑6 speed grade) with an access time of 5.4 ns for CAS latency = 3.
• Programmable Burst and Latency — Programmable burst lengths (1, 2, 4, 8, full page) and burst sequence (sequential/interleave); CAS latency programmable to 2 or 3 clocks.
• Refresh and Power Modes — Auto Refresh (CBR) and Self Refresh supported; device offers 4096 refresh cycles every 16 ms (A2 grade) or every 64 ms (A1 grade).
• Interface & I/O — LVTTL-compatible interface for control signals and parallel data transfers; burst read/write and burst read/single write operations supported.
• Power Supply — Operates from 3.0 V to 3.6 V supply range (VDD/VDDQ typically 3.3 V as shown in datasheet tables).
• Package & Temperature — 54-ball TFBGA (8 × 8) package; specified operating temperature range −40 °C to +85 °C (TA).

Typical Applications

• Embedded memory subsystems — Use as a 128 Mbit synchronous DRAM for systems requiring parallel SDRAM memory at up to 166 MHz operation.
• High-speed buffering — Suitable for designs that require pipeline architecture and programmable burst transfers for short-latency buffering.
• Low-voltage 3.3 V systems — Fits applications powered from 3.0–3.6 V supplies where LVTTL signaling and standard SDRAM timing are required.

Unique Advantages

• Flexible timing configuration — Programmable CAS latency (2 or 3) and selectable burst lengths allow tailoring of latency and throughput to system needs.
• High-frequency operation — 166 MHz clock capability (‑6 grade) combined with 5.4 ns access time (CL=3) supports higher data-rate designs.
• Power management features — Auto and self refresh reduce maintenance overhead and support low-power standby scenarios.
• Compact BGA package — 54-TFBGA (8×8) package conserves PCB area while providing the required I/O for parallel SDRAM operation.
• Deterministic synchronous interface — LVTTL clocked interface and pipeline architecture simplify timing analysis and system integration.

Why Choose IS45S16800E-6BLA1?

The IS45S16800E-6BLA1 positions itself as a straightforward 128 Mbit synchronous DRAM option for designs needing a parallel SDRAM with programmable burst behavior, selectable CAS latency, and high-frequency operation up to 166 MHz. Its quad-bank pipeline architecture and LVTTL interface provide predictable timing for systems that require repeated, high-speed memory transactions.

This device is well suited to engineers and procurement teams specifying a compact 54-ball TFBGA SDRAM package with 3.0–3.6 V operation and an extended operating temperature down to −40 °C. The included refresh and power-saving features help manage system-level power and reliability requirements over the product life.

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