IS45S16800E-6TLA1

The IS45S16800E-6TLA1 is a 128 Mbit synchronous DRAM (SDRAM) organized as 8M × 16 with a synchronous parallel interface and quad-bank architecture. It delivers pipeline-based high-speed data transfers with fully synchronous operation referenced to the rising edge of the clock.

Designed for systems requiring parallel SDRAM memory, the device supports up to 166 MHz clock operation, programmable burst lengths and sequences, and industry-standard refresh and self-refresh modes, enabling predictable timing and memory handling for embedded and board-level designs.

Key Features

• Memory Architecture  The device is a 128 Mbit SDRAM organized as 8M × 16 with internal quad-bank structure to support concurrent row operations and efficient data throughput.
• Performance  Supports clock frequencies up to 166 MHz with an access time from clock of 5.4 ns (CAS latency = 3). Programmable CAS latency options (2, 3 clocks) allow trade-offs between speed and timing.
• Burst and Access Modes  Programmable burst lengths (1, 2, 4, 8, full page) and selectable burst sequences (sequential/interleave) with burst read/write and burst read/single write capability for flexible data transfers.
• Refresh and Power Management  Auto Refresh (CBR) and Self Refresh modes are supported. The device implements the required refresh cycle counts (4096 refresh cycles every 16 ms for A2 grade or every 64 ms for A1 grade as specified in the datasheet excerpt).
• Interface  LVTTL-compatible signals and a parallel memory interface provide standard synchronous connectivity for legacy and board-level SDRAM systems.
• Power Supply  Designed for 3.3 V VDD/VDDQ operation and specified to support a supply range of 3.0 V to 3.6 V.
• Package  Available in a 54-pin TSOP II package (0.400", 10.16 mm width), suitable for surface-mount PCB assembly at the board level.
• Operating Temperature  Specified operating ambient temperature range of -40 °C to +85 °C (TA) for the listed part variant.

Typical Applications

• Parallel SDRAM memory expansion  Used as a 128 Mbit parallel SDRAM device where synchronous burst read/write and programmable CAS latency are required.
• Industrial and embedded systems  Suited to board-level designs requiring extended ambient operation (−40 °C to +85 °C) and a 3.3 V supply domain.
• High-speed data buffering  Employed in systems needing burst transfers at up to 166 MHz clock rates with programmable burst lengths and sequences.

Unique Advantages

• Quad-bank SDRAM architecture: Enables internal bank operations that help hide row access/precharge latency for improved effective throughput.
• Flexible timing options: Programmable CAS latency (2 or 3) and selectable burst modes allow designers to match device timing to system requirements.
• Industry-standard interface: LVTTL-compatible signals and parallel memory interface simplify integration into existing SDRAM-based hardware.
• Robust thermal range: Specified for −40 °C to +85 °C ambient operation, supporting designs that require extended temperature performance.
• Compact board-level package: 54-pin TSOP II (10.16 mm width) offers a standardized, compact footprint for surface-mount PCB designs.

Why Choose IS45S16800E-6TLA1?

The IS45S16800E-6TLA1 positions itself as a straightforward, standards-based 128 Mbit SDRAM solution for systems needing synchronous parallel memory with programmable timing and burst flexibility. Its support for up to 166 MHz operation, LVTTL interface, and quad-bank internal organization provide predictable timing and practical throughput for board-level memory expansion.

This device is appropriate for designers and procurement teams specifying 3.3 V class SDRAM in compact TSOP II packages who require documented timing parameters, refresh modes, and extended temperature operation. The combination of programmable latencies, burst control, and standard electrical interfaces supports reliable integration into existing SDRAM-based designs.

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