IS45S16800E-7BLA1-TR

The IS45S16800E-7BLA1-TR is a 128 Mbit synchronous DRAM (SDRAM) organized as 8M × 16 with a parallel memory interface and a quad-bank internal architecture. The device is fully synchronous with all signals referenced to the rising edge of the clock and implements pipeline architecture for high-speed data transfer.

Designed for systems that require 128 Mbit parallel SDRAM, the device provides programmable burst length and sequence, selectable CAS latency, internal bank management to hide row access/precharge, and power-management features including auto-refresh and self-refresh.

Key Features

• Memory Architecture 128 Mbit SDRAM organized as 8M × 16 (internally configured as 2M × 16 × 4 banks), delivering quad-bank operation for improved row/column access handling.
• Performance Supports a clock frequency of 143 MHz (‑7 speed grade) with an access time from clock of 5.4 ns. Programmable CAS latency options: 2 or 3 clocks.
• Burst and Access Control Programmable burst length (1, 2, 4, 8, full page) and programmable burst sequence (Sequential/Interleave). Supports burst read/write and burst read/single write operations with burst termination via stop or precharge commands.
• Refresh and Power Management Auto Refresh (CBR) and Self Refresh supported. Refresh options include 4096 cycles every 16 ms (A2 grade) or every 64 ms (A1 grade), plus a power-down mode.
• Interface and I/O LVTTL-compatible I/O with a parallel memory interface and random column address capability every clock cycle. All inputs and outputs are referenced to the positive clock edge.
• Voltage and Temperature Operates from 3.0 V to 3.6 V (VDD/VDDQ typically 3.3 V) and specified for an operating ambient temperature range of -40°C to +85°C (TA).
• Package Supplied in a compact 54‑TFBGA (8 × 8 ball) package for small-footprint board designs.

Unique Advantages

• High-speed synchronous operation: 143 MHz clock support and 5.4 ns access time provide fast, clock‑aligned data transfers.
• Flexible latency and burst control: Selectable CAS latencies (2, 3) and multiple burst length/sequence options allow tuning for system timing and throughput.
• Integrated bank architecture: Quad-bank design and internal bank management help reduce row access and precharge penalties.
• Robust refresh and low-power modes: Auto-refresh and self-refresh support with defined refresh cycle options enable reliable data retention and power management.
• Compact BGA footprint: 54‑TFBGA (8×8) package minimizes PCB area for space-constrained designs.
• Wide voltage and temperature range: 3.0–3.6 V supply range and -40°C to +85°C operating ambient support diverse operating conditions.

Why Choose IS45S16800E-7BLA1-TR?

The IS45S16800E-7BLA1-TR combines a 128 Mbit synchronous DRAM architecture with programmable burst and latency options, internal quad-bank management, and defined refresh modes to deliver a configurable, high-speed memory building block. Its LVTTL interface and parallel operation make it suitable for designs that need predictable, clock-referenced memory behavior.

This device is appropriate for engineers specifying a compact, 54‑TFBGA packaged SDRAM with 3.3 V operation and an extended ambient temperature range. The combination of flexible access control, refresh features, and a small package supports scalable, space-conscious memory implementations.

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