IS45S16800E-7TLA1-TR

The IS45S16800E-7TLA1-TR is a 128Mbit synchronous DRAM (SDRAM) organized as 8M × 16 with a parallel memory interface. It implements a pipelined, fully synchronous architecture with internal bank management and LVTTL-compatible signals referenced to the positive edge of the clock.

Designed for systems that require high-speed, low-latency volatile memory, this device provides programmable burst modes, selectable CAS latency, and refresh modes to support a range of synchronous memory applications operating from a 3.0 V to 3.6 V supply and an operating temperature range of -40 °C to +85 °C.

Key Features

• Memory Architecture 128 Mbit SDRAM organized as 8M × 16 with quad-bank internal configuration to support concurrent row access and precharge hiding.
• Synchronous, Pipelined Operation Fully synchronous operation with all signals referenced to the rising clock edge and pipeline architecture for high-speed data transfer.
• Performance Rated for a 143 MHz clock frequency (‑7 speed grade) with an access time from clock of 5.4 ns (CAS latency = 3).
• Flexible Burst and CAS Control Programmable burst lengths (1, 2, 4, 8, full page) and programmable burst sequence (sequential/interleave); CAS latency selectable between 2 and 3 clocks.
• Refresh and Power Modes Supports Auto Refresh, Self Refresh and CBR; datasheet specifies 4096 refresh cycles every 16 ms (A2 grade) or 64 ms (A1 grade).
• Interface and Signaling Parallel memory interface with LVTTL-compatible I/O signaling and support for random column address every clock cycle.
• Power and Supply Operates from a 3.0 V to 3.6 V supply (typical VDD/VDDQ 3.3 V as described in the datasheet).
• Package and Temperature Available in a 54-pin TSOP II package (0.400", 10.16 mm width) with an operating ambient temperature range of -40 °C to +85 °C (TA).

Typical Applications

• High‑speed system memory Serves as synchronous volatile memory for systems that require pipeline access and programmable latency.
• Data buffering and streaming Programmable burst lengths and interleave/sequential sequences support burst read/write operations for streaming data buffers.
• Embedded and industrial equipment 3.0 V–3.6 V supply range and extended temperature operation allow deployment in temperature-challenged environments.

Unique Advantages

• High-speed synchronous operation: 143 MHz clock rating (‑7) with pipelined architecture provides fast, predictable timing for synchronous designs.
• Low-latency access: 5.4 ns access time from clock (CAS latency = 3) supports tight timing requirements in performance-sensitive applications.
• Programmable burst and CAS flexibility: Multiple burst lengths and CAS latency options let designers tune throughput and latency to match system needs.
• Robust refresh and power features: Auto Refresh, Self Refresh and CBR support preserve data integrity while enabling power-saving modes.
• Standard TSOP II packaging: 54-pin TSOP II (10.16 mm width) provides a common surface-mount footprint for board-level integration.
• Wide supply and temperature range: 3.0 V–3.6 V operation and -40 °C to +85 °C ambient rating accommodate a variety of system power and environmental conditions.

Why Choose IS45S16800E-7TLA1-TR?

The IS45S16800E-7TLA1-TR delivers a compact 128 Mbit SDRAM solution with a fully synchronous, pipelined architecture and programmable timing features that support high-speed data transfer and configurable latency. Its 8M × 16 organization, selectable CAS latencies, and burst control make it suitable for designs that require predictable synchronous memory behavior.

With standard 54‑pin TSOP II packaging, LVTTL-compatible signaling, and support for standard refresh and low-power modes, this device is aimed at designs needing a reliable, high-performance parallel DRAM component operating from a 3.0 V–3.6 V supply across an extended temperature range.

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