IS45S16800E-7TLA2

The IS45S16800E-7TLA2 is a 128Mbit synchronous DRAM organized as 8M × 16 with a parallel memory interface. It implements a quad-bank, fully synchronous pipeline architecture with all signals referenced to the rising edge of the clock to support high-speed, low-latency data transfers.

Designed for systems requiring compact, board-level parallel SDRAM, this device delivers a 143 MHz clock rate (‑7 speed grade), 5.4 ns access time (CAS latency = 3), programmable burst and CAS options, and a nominal 3.3V supply with an operating range of 3.0–3.6V.

Key Features

• Memory Architecture 128 Mbit SDRAM organized as 8M × 16 with a quad-bank internal structure to enable efficient banked access and hidden row precharge.
• Performance 143 MHz clock frequency (‑7 grade) with 5.4 ns access time at CAS latency = 3, enabling high-speed synchronous operation.
• Interface & Timing Fully synchronous operation with LVTTL-compatible inputs, programmable CAS latency (2 or 3 clocks), programmable burst lengths (1, 2, 4, 8, full page) and selectable burst sequence (sequential/interleave).
• Refresh & Power Modes Supports Auto Refresh and Self Refresh modes. Refresh options include 4096 cycles every 16 ms (A2 grade) or every 64 ms (A1 grade).
• Burst & Access Flexibility Burst read/write and burst read/single write capability with burst termination via burst stop and precharge commands; random column address every clock cycle.
• Power Supply Nominal VDD/VDDQ = 3.3V with an operating supply range of 3.0–3.6V.
• Package 54-pin TSOP II (0.400", 10.16 mm width) footprint for compact board integration.
• Operating Temperature Specified ambient range from −40°C to +105°C (TA), accommodating extended-temperature applications.

Unique Advantages

• Synchronous, pipeline architecture: Enables predictable timing and high-throughput operation tied to a single clock edge.
• Flexible timing and burst options: Programmable CAS latency and multiple burst configurations allow tuning for latency or throughput trade-offs.
• Banked internal organization: Quad-bank design helps hide row access and precharge cycles, improving effective bandwidth for random access patterns.
• Wide supply tolerance with nominal 3.3V: Supports systems operating across a 3.0–3.6V range while using standard 3.3V memory signaling.
• Compact TSOP II footprint: 54-pin 0.400" package simplifies placement in space-constrained board designs.
• Extended temperature range: Specified operation from −40°C to +105°C for robust behavior in varying thermal environments.

Why Choose IS45S16800E-7TLA2?

The IS45S16800E-7TLA2 combines a 128Mbit SDRAM density with a synchronous, pipeline architecture and a 143 MHz speed grade to deliver predictable, high-speed parallel memory performance. Its programmable timing, burst controls, and internal bank management enable designers to tune memory behavior for specific latency and throughput needs.

With a nominal 3.3V supply (3.0–3.6V range), LVTTL-compatible interface, compact 54-pin TSOP II package, and a wide operating temperature range, this device is suitable for board-level designs that require a reliable, standard-footprint parallel SDRAM solution backed by Integrated Silicon Solution, Inc. product specification details.

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