IS45S16800E-7TLA1

IC DRAM 128MBIT PAR 54TSOP II
Part Description

IC DRAM 128MBIT PAR 54TSOP II

Quantity 979 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package54-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size128 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency143 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging54-TSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization8M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of IS45S16800E-7TLA1 – IC DRAM 128MBIT PAR 54TSOP II

The IS45S16800E-7TLA1 is a 128 Mbit synchronous DRAM (SDRAM) device organized as 8M × 16 with a parallel LVTTL interface and quad-bank internal architecture. It implements a pipeline, fully synchronous design with registered inputs and outputs referenced to the rising edge of the clock.

Designed for systems that require compact, board-level SDRAM in a 54-pin TSOP II package, the device offers programmable burst lengths and sequence, selectable CAS latency, and refresh/self-refresh modes to support high-speed data transfer and predictable timing behavior.

Key Features

  • Memory Core & Organization 128 Mbit SDRAM organized as 8M × 16 with four internal banks (2M ×16 ×4), supporting random column address every clock cycle for efficient memory access.
  • Synchronous Pipeline Architecture Fully synchronous operation with all signals referenced to the positive clock edge and pipeline architecture for high-speed data transfer.
  • Performance Operates at up to 143 MHz for the –7 speed grade with an access time from clock of 5.4 ns (CAS latency = 3).
  • Programmable Burst & Timing Programmable burst lengths (1, 2, 4, 8, full page) and burst sequence (sequential/interleave); programmable CAS latency options of 2 or 3 clocks.
  • Refresh & Power Modes Supports Auto Refresh (CBR) and Self Refresh; 4096 refresh cycles per 16 ms (A2 grade) or 64 ms (A1 grade) as specified in the device options.
  • Interface & Logic Levels LVTTL-compatible inputs and outputs with a parallel memory interface suitable for standard SDRAM controller implementations.
  • Power Supply Operates at a supply range of 3.0 V to 3.6 V with typical 3.3 V VDD and VDDQ operation.
  • Package & Mounting 54-pin TSOP II (0.400", 10.16 mm width) package for compact board-level mounting.
  • Operating Temperature Specified operating ambient range of –40 °C to +85 °C (TA) for the provided option.

Typical Applications

  • Embedded Systems Board-level SDRAM for embedded designs that require a 128 Mbit parallel memory in a compact 54-TSOP II package.
  • Communications Equipment Buffer and working memory in systems where synchronous, clocked data transfer and programmable burst behavior are needed.
  • Industrial Control Memory for control and data-logging applications that require operation across an ambient range of –40 °C to +85 °C.
  • Consumer Electronics On-board SDRAM for devices needing configurable burst lengths and CAS latency options for diverse throughput requirements.

Unique Advantages

  • Synchronous, clocked operation: Performance and timing are driven by a positive-edge clock reference, enabling predictable pipeline data transfers at up to 143 MHz.
  • Flexible burst and latency control: Programmable burst lengths/sequences and CAS latency options allow designers to tune throughput and latency to match system requirements.
  • Compact TSOP II footprint: 54-pin TSOP II package (10.16 mm width) minimizes board area for space-constrained designs while providing a parallel interface.
  • Robust refresh and low-power modes: Auto Refresh and Self Refresh support system-level power management and data retention during low-power states.
  • Wide operating voltage window: 3.0 V to 3.6 V supply range with typical 3.3 V operation for compatibility with standard memory power domains.
  • Extended ambient temperature range: Specified for –40 °C to +85 °C to support designs exposed to a broad range of operating conditions.

Why Choose IS45S16800E-7TLA1?

The IS45S16800E-7TLA1 provides a compact, fully synchronous 128 Mbit SDRAM solution that balances performance, configurability, and board-level integration. Its programmable burst options, CAS latency selections, and quad-bank architecture make it well suited for designs that require predictable high-speed parallel memory behavior in a space-efficient TSOP II package.

This device is a fit for engineers and procurement teams specifying on-board SDRAM where a defined clocked interface, selectable timing parameters, and operating range down to –40 °C are required. Its features enable tuning of throughput and power characteristics to match system needs while maintaining standard 3.3 V memory system compatibility.

Request a quote or submit an inquiry for pricing and availability to get detailed lead-time and ordering information for the IS45S16800E-7TLA1.

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