IS45S16800E-7TLA2-TR

The IS45S16800E-7TLA2-TR is a 128Mbit synchronous DRAM (SDRAM) device organized as 8M × 16 with a quad-bank architecture and a fully synchronous, pipelined interface. It is designed for high-speed data transfer with all signals referenced to the rising edge of the clock and an LVTTL-compatible interface.

This SDRAM suits designs that require predictable, high-throughput parallel memory—providing programmable burst lengths and CAS latencies, internal bank management for row access/precharge hiding, and on-chip refresh mechanisms to support continuous operation across a broad temperature range.

Key Features

• Memory Core 128Mbit SDRAM organized as 8M × 16 bits across four internal banks, enabling concurrent bank operation and efficient row management.
• Performance & Timing Operates up to 143 MHz (‑7 speed grade) with an access time from clock of 5.4 ns (CAS latency = 3). Programmable CAS latency options include 2 and 3 clocks.
• Burst & Sequencing Programmable burst lengths (1, 2, 4, 8, full page) and selectable sequential or interleave burst sequences for flexible data transfer patterns.
• Refresh & Power Modes Supports auto refresh (CBR) and self refresh; device offers 4096 refresh cycles per interval depending on grade. Includes power-saving power-down and self-refresh capabilities.
• Interface Parallel LVTTL-compatible interface with random column address capability every clock cycle for predictable column accesses.
• Voltage & Supply Designed for 3.3 V operation; documented operating supply range includes 3.0 V to 3.6 V.
• Temperature Range Specified for operation from −40°C to +105°C (TA) for the high-temperature option.
• Package 54-pin TSOP II package (0.400", 10.16 mm width) for compact board-level footprint and standard surface-mount assembly.

Typical Applications

• High-speed buffering Parallel SDRAM buffering where predictable synchronous timing and programmable burst transfers are required.
• Embedded system memory System memory expansion in designs that need 128 Mbit of volatile SDRAM with a parallel LVTTL interface.
• Data capture and frame storage Temporary storage for streaming data where internal bank interleaving and burst modes improve throughput.

Unique Advantages

• Deterministic synchronous operation: All signals referenced to the rising edge of the clock, enabling tight timing control and predictable data transfers.
• High-throughput capability: 143 MHz clock operation with 5.4 ns access from clock at CAS = 3 supports fast read/write cycles.
• Flexible data handling: Programmable burst lengths and burst sequencing allow tuning for sequential or interleaved access patterns.
• Built-in refresh and power modes: Auto refresh and self-refresh plus power-down reduce external management and support low-power idle states.
• Wide operating temperature: Specified operation from −40°C to +105°C supports deployment in temperature-challenging environments.
• Standard TSOP II footprint: 54-pin TSOP II package provides a compact, industry-standard surface-mount option for board-level integration.

Why Choose IS45S16800E-7TLA2-TR?

The IS45S16800E-7TLA2-TR combines a synchronous, pipelined SDRAM architecture with programmable timing and burst options to give designers deterministic performance and flexible data-transfer modes. Its 8M × 16 organization and quad-bank structure enable efficient row management and concurrent operations suited to high-throughput parallel memory requirements.

This device is appropriate for engineers and procurement teams seeking a 128 Mbit SDRAM in a compact 54‑pin TSOP II package with documented timing (143 MHz, 5.4 ns access), LVTTL interface compatibility, on-chip refresh support, and a broad operating temperature range for robust system-level deployment.

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