IS45S16800F-6BLA1-TR
| Part Description |
IC DRAM 128MBIT PAR 54TFBGA |
|---|---|
| Quantity | 1,342 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TFBGA (8x8) | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 128 Mbit | Access Time | 5.4 ns | Grade | Industrial | ||
| Clock Frequency | 166 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 54-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 8M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of IS45S16800F-6BLA1-TR – 128 Mbit SDRAM, 54-TFBGA
The IS45S16800F-6BLA1-TR is a 128 Mbit volatile SDRAM device organized as 8M × 16 with a parallel memory interface. It implements synchronous DRAM architecture and delivers high-speed access suitable for systems that require external volatile memory for temporary data storage and buffering.
Designed for compact board layouts, the device is supplied in a 54-TFBGA (8×8) package and operates over a broad supply and temperature range, making it applicable to a wide range of electronics designs that specify parallel SDRAM memory.
Key Features
- Memory: 128 Mbit capacity organized as 8M × 16, providing a straightforward parallel DRAM memory block for external memory applications.
- SDRAM Technology: Synchronous DRAM architecture with a parallel memory interface suitable for systems requiring external volatile memory.
- Performance: Clock frequency specified at 166 MHz with an access time of 5.4 ns, enabling fast read/write operations within the device's operating parameters.
- Power: Operates from a 3.0 V to 3.6 V supply range, supporting common 3V-class system power rails.
- Package: 54-TFBGA (8×8) supplier device package, providing a compact surface-mount footprint for dense board designs.
- Temperature Range: Specified operating ambient temperature from −40 °C to 85 °C (TA), supporting extended temperature applications.
- Mounting and Interface: Parallel memory interface and volatile mounting type consistent with external DRAM use in system designs.
Typical Applications
- System Memory Expansion: Used as external SDRAM for systems that require additional volatile memory capacity for program or data storage during operation.
- Data Buffering and Temporary Storage: Suitable for buffering and short-term data storage in designs that utilize a parallel SDRAM interface.
- Embedded and Electronics Designs: Fits compact PCB layouts where a 54-TFBGA package and 128 Mbit SDRAM are required to meet board space and memory capacity constraints.
Unique Advantages
- 128 Mbit Density: Provides a mid-range memory capacity (8M × 16) that balances storage needs and board footprint.
- High-Speed Access: 166 MHz clock frequency and 5.4 ns access time enable responsive memory operations for time-sensitive tasks.
- Standard 3 V Supply: Operates from 3.0 V to 3.6 V, aligning with common 3V power domains to simplify power design.
- Compact BGA Packaging: 54-TFBGA (8×8) package reduces PCB area while providing a robust surface-mount solution.
- Extended Operating Temperature: −40 °C to 85 °C ambient range supports deployments in environments requiring extended temperature tolerance.
- Parallel SDRAM Interface: Straightforward parallel interface support for systems designed around external SDRAM modules.
Why Choose IS45S16800F-6BLA1-TR?
The IS45S16800F-6BLA1-TR positions itself as a compact, mid-density SDRAM option offering 128 Mbit of volatile storage with solid performance characteristics—166 MHz clocking and 5.4 ns access time—while operating from a standard 3.0–3.6 V supply. Its 54-TFBGA package and −40 °C to 85 °C operating range make it suitable for designs that need a balance of density, speed, and board-area efficiency.
This device is well suited for engineers specifying external parallel SDRAM in embedded systems, devices requiring temporary data buffering, or other electronics designs where the listed electrical, timing, and mechanical specifications meet system requirements.
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