IS45S16800F-6TLA1-TR
| Part Description |
IC DRAM 128MBIT PAR 54TSOP II |
|---|---|
| Quantity | 1,492 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 128 Mbit | Access Time | 5.4 ns | Grade | Industrial | ||
| Clock Frequency | 166 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 8M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of IS45S16800F-6TLA1-TR – IC DRAM 128MBIT PAR 54TSOP II
The IS45S16800F-6TLA1-TR is a volatile SDRAM device offering 128 Mbit of DRAM organized as 8M × 16. It implements a synchronous parallel memory architecture optimized for systems that require a 16-bit data path and standard SDRAM timing.
Key value comes from its measured access performance (5.4 ns) and clocking capability (166 MHz), a compact 54‑TSOP II package footprint (0.400", 10.16 mm width), and an operating temperature range of −40°C to 85°C for deployment across a range of ambient conditions.
Key Features
- Memory Type & Architecture SDRAM volatile memory organized as 8M × 16 for a total capacity of 128 Mbit.
- Performance Clock frequency specified at 166 MHz with an access time of 5.4 ns to support synchronous memory operations.
- Interface Parallel memory interface designed for integration into parallel SDRAM memory buses and controllers.
- Power Voltage supply range of 3.0 V to 3.6 V compatible with standard 3.3 V system rails.
- Package 54‑TSOP II package (0.400", 10.16 mm width) for compact board-level implementation.
- Environmental Operating ambient temperature range of −40°C to 85°C (TA).
- Memory Format DRAM memory format with supplier device package identified as 54‑TSOP II.
Typical Applications
- Parallel memory subsystems — Provides 128 Mbit of parallel SDRAM storage for systems using 16-bit data buses and synchronous DRAM controllers.
- Embedded memory expansion — Used as onboard volatile memory where 128 Mbit capacity and SDRAM timing are required for buffering or working memory.
- Temperature-challenged electronic equipment — The −40°C to 85°C operating range supports designs that operate across extended ambient temperatures.
Unique Advantages
- Measured SDRAM timing — 5.4 ns access time combined with a 166 MHz clock specification enables predictable synchronous memory performance.
- 16-bit organization — 8M × 16 arrangement simplifies integration into parallel 16-bit data-path systems.
- Compact TSOP II package — 54‑TSOP II (0.400", 10.16 mm width) package provides a small PCB footprint for space-constrained designs.
- Standard 3.3 V compatibility — 3.0 V to 3.6 V supply range aligns with common 3.3 V system rails.
- Extended ambient range — −40°C to 85°C rating supports reliable operation across a wide set of environmental conditions.
Why Choose IC DRAM 128MBIT PAR 54TSOP II?
The IS45S16800F-6TLA1-TR positions itself as a straightforward, specification-driven SDRAM component for designs needing 128 Mbit of synchronous, parallel DRAM with a 16-bit organization. Its combination of 166 MHz clocking, 5.4 ns access times, and a compact 54‑TSOP II package makes it suitable for developers focused on predictable memory performance within constrained board space and standard 3.3 V systems.
This device is appropriate for engineers and procurement teams specifying on-board volatile memory where clear, verifiable electrical, timing, and environmental specifications are required to support integration, validation, and long-term deployment.
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