IS45S16800F-6TLA1-TR

IC DRAM 128MBIT PAR 54TSOP II
Part Description

IC DRAM 128MBIT PAR 54TSOP II

Quantity 1,492 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package54-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size128 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency166 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging54-TSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization8M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of IS45S16800F-6TLA1-TR – IC DRAM 128MBIT PAR 54TSOP II

The IS45S16800F-6TLA1-TR is a volatile SDRAM device offering 128 Mbit of DRAM organized as 8M × 16. It implements a synchronous parallel memory architecture optimized for systems that require a 16-bit data path and standard SDRAM timing.

Key value comes from its measured access performance (5.4 ns) and clocking capability (166 MHz), a compact 54‑TSOP II package footprint (0.400", 10.16 mm width), and an operating temperature range of −40°C to 85°C for deployment across a range of ambient conditions.

Key Features

  • Memory Type & Architecture SDRAM volatile memory organized as 8M × 16 for a total capacity of 128 Mbit.
  • Performance Clock frequency specified at 166 MHz with an access time of 5.4 ns to support synchronous memory operations.
  • Interface Parallel memory interface designed for integration into parallel SDRAM memory buses and controllers.
  • Power Voltage supply range of 3.0 V to 3.6 V compatible with standard 3.3 V system rails.
  • Package 54‑TSOP II package (0.400", 10.16 mm width) for compact board-level implementation.
  • Environmental Operating ambient temperature range of −40°C to 85°C (TA).
  • Memory Format DRAM memory format with supplier device package identified as 54‑TSOP II.

Typical Applications

  • Parallel memory subsystems — Provides 128 Mbit of parallel SDRAM storage for systems using 16-bit data buses and synchronous DRAM controllers.
  • Embedded memory expansion — Used as onboard volatile memory where 128 Mbit capacity and SDRAM timing are required for buffering or working memory.
  • Temperature-challenged electronic equipment — The −40°C to 85°C operating range supports designs that operate across extended ambient temperatures.

Unique Advantages

  • Measured SDRAM timing — 5.4 ns access time combined with a 166 MHz clock specification enables predictable synchronous memory performance.
  • 16-bit organization — 8M × 16 arrangement simplifies integration into parallel 16-bit data-path systems.
  • Compact TSOP II package — 54‑TSOP II (0.400", 10.16 mm width) package provides a small PCB footprint for space-constrained designs.
  • Standard 3.3 V compatibility — 3.0 V to 3.6 V supply range aligns with common 3.3 V system rails.
  • Extended ambient range — −40°C to 85°C rating supports reliable operation across a wide set of environmental conditions.

Why Choose IC DRAM 128MBIT PAR 54TSOP II?

The IS45S16800F-6TLA1-TR positions itself as a straightforward, specification-driven SDRAM component for designs needing 128 Mbit of synchronous, parallel DRAM with a 16-bit organization. Its combination of 166 MHz clocking, 5.4 ns access times, and a compact 54‑TSOP II package makes it suitable for developers focused on predictable memory performance within constrained board space and standard 3.3 V systems.

This device is appropriate for engineers and procurement teams specifying on-board volatile memory where clear, verifiable electrical, timing, and environmental specifications are required to support integration, validation, and long-term deployment.

Request a quote or submit a product inquiry to receive pricing, lead-time, and availability details for the IS45S16800F-6TLA1-TR.

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