IS45S16800F-6CTLA1

The IS45S16800F-6CTLA1 is a 128 Mbit volatile DRAM device implemented in SDRAM technology with a parallel memory interface. It provides an 8M × 16 memory organization optimized for applications that require parallel SDRAM memory with a compact 54‑TSOP II package footprint.

With a specified clock frequency of 166 MHz, a 5.4 ns access time, and a supply range of 3.0 V to 3.6 V, this component targets designs needing deterministic parallel memory performance within a commercial operating temperature range of −40°C to 85°C.

Key Features

• Memory Core (SDRAM)  128 Mbit SDRAM organized as 8M × 16, supporting parallel data transfer for systems that require synchronous DRAM behavior.
• Performance  Rated clock frequency of 166 MHz and access time of 5.4 ns to support time-sensitive memory operations.
• Power  Operates from a 3.0 V to 3.6 V supply range, allowing integration with standard 3.3 V system power rails.
• Package  54‑TSOP II (0.400", 10.16 mm width) supplier device package for compact board-level placement and predictable mechanical dimensions.
• Operating Temperature  Specified for operation from −40°C to 85°C (TA), supporting deployments across a broad ambient temperature range.
• Interface  Parallel memory interface suitable for designs using synchronous parallel DRAM connectivity.

Typical Applications

• Systems requiring 128 Mbit SDRAM  Use where an 8M × 16 parallel SDRAM memory block is needed for data buffering or working memory.
• Designs with 3.0–3.6 V power rails  Integrate in products that supply standard 3.3 V nominal power for memory subsystems.
• Boards with compact footprint constraints  Deployable where a 54‑TSOP II package fits the board layout and mechanical envelope.
• Environments within −40°C to 85°C  Applicable for applications that require operation across this specified ambient temperature range.

Unique Advantages

• Parallel SDRAM organization: 8M × 16 organization delivers a straightforward mapping for parallel data buses and predictable memory addressing.
• Defined performance metrics: 166 MHz clock frequency and 5.4 ns access time provide measurable timing characteristics for system-level memory timing design.
• Standard supply range: 3.0 V to 3.6 V compatibility simplifies integration with common 3.3 V power domains.
• Compact TSOP II package: 54‑lead TSOP II (10.16 mm width) enables higher density board layouts while maintaining a defined mechanical profile.
• Wide operating temperature: −40°C to 85°C rating supports reliability across varied ambient conditions within that range.

Why Choose IS45S16800F-6CTLA1?

The IS45S16800F-6CTLA1 positions itself as a straightforward parallel SDRAM option delivering clear, verifiable specifications—128 Mbit capacity, 8M × 16 organization, 166 MHz clock rating, and 5.4 ns access time—packaged in a 54‑TSOP II footprint. These attributes make it well suited for designs that require deterministic parallel memory behavior, standard 3.3 V power compatibility, and operation across −40°C to 85°C.

Manufactured by ISSI (Integrated Silicon Solution Inc), this DRAM device is appropriate for engineers and procurement teams specifying compact SDRAM components where defined timing, supply, package, and temperature characteristics are required for system-level memory design.

Request a quote or submit an inquiry for IS45S16800F-6CTLA1 to obtain pricing and availability information.