IS45S16800F-6TLA1

IC DRAM 128MBIT PAR 54TSOP II
Part Description

IC DRAM 128MBIT PAR 54TSOP II

Quantity 31 Available (as of May 6, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package54-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size128 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency166 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging54-TSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization8M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of IS45S16800F-6TLA1 – IC DRAM 128MBIT PAR 54TSOP II

The IS45S16800F-6TLA1 is a 128 Mbit volatile SDRAM organized as 8M × 16 with a parallel memory interface. It offers a 166 MHz clock rating and a 5.4 ns access time, suitable for designs that require mid‑range SDRAM performance in a compact 54‑TSOP II package.

This device operates from a 3.0 V to 3.6 V supply and supports an ambient temperature range of −40°C to 85°C, making it appropriate for systems needing stable DRAM storage across commercial and industrial temperature conditions.

Key Features

  • Memory Type & Technology  Volatile SDRAM offering 128 Mbit of storage in a DRAM format.
  • Organization  Internal memory organized as 8M × 16, enabling 16‑bit wide parallel data transfers.
  • Performance  Rated for a 166 MHz clock frequency with a typical access time of 5.4 ns to support time‑sensitive memory operations.
  • Voltage Supply  Operates from 3.0 V to 3.6 V supply voltage.
  • Package  Supplied in a 54‑lead TSOP II package (0.400" / 10.16 mm width) suitable for space‑constrained board layouts.
  • Temperature Range  Specified for operation from −40°C to 85°C (TA) to accommodate a broad range of ambient conditions.
  • Interface  Parallel memory interface for straightforward integration into parallel SDRAM memory buses.

Unique Advantages

  • Compact TSOP II footprint: The 54‑lead TSOP II package (10.16 mm width) provides a space‑efficient form factor for board designs with limited area.
  • Mid‑range clock performance: 166 MHz clock rating and 5.4 ns access time deliver responsive SDRAM performance for systems requiring moderate bandwidth.
  • 16‑bit data organization: 8M × 16 memory organization supports wider parallel data transfers, simplifying data path design in 16‑bit systems.
  • Wide operating temperature: −40°C to 85°C rating helps ensure consistent operation across varied ambient environments.
  • Standard 3.0–3.6 V operation: Compatible with common 3.3 V system rails for straightforward power supply integration.

Why Choose IC DRAM 128MBIT PAR 54TSOP II?

The IS45S16800F-6TLA1 positions itself as a practical SDRAM option where a 128 Mbit parallel memory with 16‑bit organization is required. Its combination of 166 MHz clock capability, 5.4 ns access time, and a compact 54‑TSOP II package supports designs that need balanced performance and board‑space efficiency.

This part is suited to customers and designs that require a standard 3.0–3.6 V SDRAM device rated for extended temperature operation (−40°C to 85°C). It offers a clear specification set for predictable integration into parallel memory subsystems.

Request a quote or contact sales to obtain pricing, availability, and further technical assistance for IS45S16800F-6TLA1.

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