IS45S16800F-6CTLA1-TR

IC DRAM 128MBIT PAR 54TSOP II
Part Description

IC DRAM 128MBIT PAR 54TSOP II

Quantity 185 Available (as of May 6, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package54-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size128 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency166 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging54-TSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization8M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of IS45S16800F-6CTLA1-TR – IC DRAM 128MBIT PAR 54TSOP II

The IS45S16800F-6CTLA1-TR is a 128 Mbit volatile SDRAM device organized as 8M × 16 with a parallel memory interface. It delivers synchronous DRAM operation with a 166 MHz clock frequency and a 5.4 ns access time for applications that require fast, byte-parallel memory access.

Packaged in a 54‑TSOP II (0.400", 10.16 mm width), the device supports a 3.0 V to 3.6 V supply range and an operating temperature of -40°C to 85°C, making it suitable for designs needing compact board-level memory with defined performance and temperature range.

Key Features

  • Memory Core 128 Mbit SDRAM organized as 8M × 16, providing parallel data paths for system memory and buffering.
  • Performance 166 MHz clock frequency with a 5.4 ns access time to support responsive memory transactions.
  • Interface Parallel memory interface compatible with standard parallel SDRAM controllers and legacy memory architectures.
  • Power Supply voltage range of 3.0 V to 3.6 V to match common 3.3 V system power rails.
  • Package 54‑TSOP II package (0.400", 10.16 mm width) for compact, surface-mount board designs.
  • Operating Range Specified operating temperature from -40°C to 85°C (TA), supporting a wide ambient temperature range.

Typical Applications

  • Embedded system memory — Used as main or auxiliary SDRAM in embedded platforms that require 128 Mbit of parallel volatile memory.
  • Buffer and frame memory — Suitable for buffering data in subsystems that rely on parallel SDRAM access and 16‑bit data width.
  • Legacy parallel memory systems — Drop-in-compatible option for designs and equipment employing parallel SDRAM interfaces and standard 54‑TSOP II footprint.

Unique Advantages

  • Deterministic performance: 166 MHz clock and 5.4 ns access time provide clearly defined timing for system memory design and timing closure.
  • Compact TSOP II packaging: 54‑pin TSOP II (0.400", 10.16 mm) minimizes board area while preserving standard pinout for parallel SDRAM.
  • Wide voltage compatibility: 3.0 V to 3.6 V supply range aligns with common 3.3 V system rails for simplified power design.
  • Broad operating temperature: Specified -40°C to 85°C operating range supports deployment across varied ambient conditions.
  • Parallel 16-bit organization: 8M × 16 organization enables 16‑bit wide data transfers for straightforward integration with 16‑bit memory buses.

Why Choose IS45S16800F-6CTLA1-TR?

The IS45S16800F-6CTLA1-TR combines a 128 Mbit SDRAM architecture with a parallel 8M × 16 organization and defined timing characteristics (166 MHz clock, 5.4 ns access time), making it well suited to designs that need predictable, parallel volatile memory in a compact TSOP II package. Its 3.0–3.6 V supply range and -40°C to 85°C operating window provide compatibility with common system power rails and a wide ambient temperature envelope.

This device is appropriate for engineers specifying board-level SDRAM for embedded systems, buffer memory, or legacy parallel memory applications where footprint, voltage compatibility, and clear timing specifications are primary considerations.

Request a quote or submit an inquiry to discuss availability, pricing, and lead times for the IS45S16800F-6CTLA1-TR.

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