IS45S16800F-6BLA1

IC DRAM 128MBIT PAR 54TFBGA
Part Description

IC DRAM 128MBIT PAR 54TFBGA

Quantity 454 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package54-TFBGA (8x8)Memory FormatDRAMTechnologySDRAM
Memory Size128 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency166 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging54-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization8M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of IS45S16800F-6BLA1 – 128 Mbit SDRAM, Parallel Interface, 54-TFBGA

The IS45S16800F-6BLA1 is a 128 Mbit volatile SDRAM organized as 8M × 16 with a parallel memory interface. It delivers synchronous DRAM performance with a 166 MHz clock frequency and a 5.4 ns access time for system memory applications requiring mid-density, fast parallel storage.

Designed for board-level integration, this device is offered in a 54-TFBGA (8×8) package and supports a 3.0 V to 3.6 V supply range with an operating ambient temperature of -40°C to 85°C.

Key Features

  • Memory Type Volatile SDRAM organized as 8M × 16 providing 128 Mbit of parallel DRAM storage.
  • Performance Supports a clock frequency of 166 MHz with an access time of 5.4 ns for synchronous, low-latency data access.
  • Voltage Supply Operates from 3.0 V to 3.6 V, simplifying power design in 3 V-class systems.
  • Interface Parallel memory interface suitable for systems requiring standard DRAM connectivity and timing.
  • Package 54-TFBGA (8×8) package case for compact board-level mounting and predictable footprint.
  • Temperature Range Rated for operation from -40°C to 85°C (TA), supporting a wide range of ambient conditions.

Typical Applications

  • Embedded Systems — Provides parallel SDRAM storage for general-purpose embedded memory expansion and buffering.
  • Networking and Communications — Useful for packet buffering and temporary data storage in systems that use parallel SDRAM.
  • Industrial Control — Suitable for controllers and instrumentation that require mid-density volatile memory across -40°C to 85°C.
  • Consumer and Multimedia Devices — Intended for designs that need fast, synchronous parallel memory in a compact BGA package.

Unique Advantages

  • Deterministic SDRAM Performance: 166 MHz clock and 5.4 ns access time provide predictable synchronous access characteristics for timing-sensitive designs.
  • Mid-Density Capacity: 128 Mbit (8M × 16) balances capacity and footprint for systems needing moderate onboard DRAM without excessive board area.
  • Wide Ambient Temperature Range: -40°C to 85°C rating supports deployment in varied environmental conditions.
  • Standard 3 V Supply: 3.0 V to 3.6 V operation aligns with common 3 V system power rails to simplify integration.
  • Compact BGA Package: 54-TFBGA (8×8) minimizes PCB area while providing reliable soldered mounting for production assemblies.

Why Choose IC DRAM 128MBIT PAR 54TFBGA?

The IS45S16800F-6BLA1 positions itself as a straightforward, mid-density parallel SDRAM option that combines synchronous operation, a 166 MHz clock capability, and a compact 54-TFBGA package. Its electrical and thermal ratings make it appropriate for designs that need reliable volatile memory with standard 3 V supply compatibility.

This device is suited to engineers specifying compact, board-mounted DRAM for embedded, industrial, networking, or multimedia applications that require predictable SDRAM timing and moderate capacity. Its specification set supports integration into systems where performance, footprint, and ambient temperature range are key selection factors.

Request a quote or submit an inquiry to sales to check availability, lead times, and pricing for the IS45S16800F-6BLA1.

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