IS45S16800F-7BLA2-TR

IC DRAM 128MBIT PAR 54TFBGA
Part Description

IC DRAM 128MBIT PAR 54TFBGA

Quantity 168 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package54-TFBGA (8x8)Memory FormatDRAMTechnologySDRAM
Memory Size128 MbitAccess Time5.4 nsGradeAutomotive
Clock Frequency143 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 105°C (TA)Write Cycle Time Word PageN/APackaging54-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization8M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of IS45S16800F-7BLA2-TR – IC DRAM 128MBIT PAR 54TFBGA

The IS45S16800F-7BLA2-TR is a 128 Mbit parallel SDRAM device organized as 8M × 16. It provides volatile, high-speed synchronous DRAM storage intended for systems that require parallel SDRAM memory.

Designed for operation across a broad ambient range and a 3.0 V to 3.6 V supply, the device targets applications where compact package footprint, defined access timing, and a parallel memory interface are required.

Key Features

  • Memory Type and Capacity — 128 Mbit DRAM, organized as 8M × 16, supplying parallel volatile storage.
  • SDRAM Technology — Synchronous DRAM architecture with a parallel memory interface for systems requiring synchronous memory access.
  • Performance — Rated clock frequency of 143 MHz and an access time of 5.4 ns for deterministic timing in memory-critical designs.
  • Voltage Supply — Operates from 3.0 V to 3.6 V, supporting standard 3 V SDRAM supply domains.
  • Package — 54-TFBGA (8 × 8) package case, providing a compact BGA footprint for board-level integration.
  • Temperature Range — Specified operating ambient range of −40 °C to 105 °C (TA) for use in temperature-variable environments.

Typical Applications

  • Parallel memory expansion — Adds 128 Mbit of volatile SDRAM to systems that require a parallel memory interface and predictable access timing.
  • High-speed buffering — Acts as a synchronous buffer for data paths that leverage a 143 MHz clock domain and 5.4 ns access performance.
  • Embedded system memory — Provides volatile working memory for embedded designs that operate on a 3.0 V to 3.6 V supply and require a compact package footprint.

Unique Advantages

  • Deterministic access timing: 5.4 ns access time and 143 MHz clock rating provide defined performance metrics for system timing design.
  • Compact BGA footprint: 54-TFBGA (8×8) package simplifies board layout where space is constrained.
  • Wide operating temperature: −40 °C to 105 °C (TA) supports deployment in environments with varying ambient temperatures.
  • Standard 3 V supply domain: 3.0 V to 3.6 V operation aligns with common SDRAM power rails for straightforward power system integration.
  • Parallel SDRAM architecture: Synchronous parallel interface eases integration into designs that require parallel memory access patterns.

Why Choose IS45S16800F-7BLA2-TR?

The IS45S16800F-7BLA2-TR is positioned as a compact, parallel SDRAM device offering clear, verifiable specifications—128 Mbit capacity (8M × 16), 143 MHz clock frequency, 5.4 ns access time, and a 54-TFBGA (8×8) package. These attributes make it suitable for designs that require synchronous parallel volatile memory with defined timing and a small PCB footprint.

Its 3.0 V to 3.6 V supply range and −40 °C to 105 °C ambient rating provide straightforward integration into systems operating across common supply domains and a wide temperature range, supporting long-term deployment where those electrical and environmental conditions are required.

Request a quote or contact sales to check availability and pricing for the IS45S16800F-7BLA2-TR.

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