IS45S16800F-7CTLA2-TR
| Part Description |
IC DRAM 128MBIT PAR 54TSOP II |
|---|---|
| Quantity | 869 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 128 Mbit | Access Time | 5.4 ns | Grade | Automotive | ||
| Clock Frequency | 143 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 105°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 8M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of IS45S16800F-7CTLA2-TR – 128Mbit Parallel SDRAM (54-TSOP II)
The IS45S16800F-7CTLA2-TR is a 128 Mbit volatile DRAM device implemented as SDRAM. It is organized as 8M × 16 with a parallel memory interface and is supplied in a 54‑lead TSOP II package.
Designed for systems requiring a 3.0 V–3.6 V supply, the device offers a 143 MHz clock frequency and a 5.4 ns access time, and supports an operating ambient temperature range of −40°C to 105°C.
Key Features
- Memory Core 128 Mbit SDRAM organized as 8M × 16; memory format: DRAM.
- Performance Clock frequency rated at 143 MHz with an access time of 5.4 ns for fast read/write operations.
- Interface Parallel memory interface for direct board-level integration with parallel memory buses.
- Power Operates from a 3.0 V to 3.6 V supply voltage range.
- Package 54‑TSOP II package (54‑TSOP, 0.400" / 10.16 mm width) for compact board footprint.
- Temperature Range Rated for operation from −40°C to 105°C (TA).
Typical Applications
- Embedded Systems Board-level memory for embedded designs that require a compact 128 Mbit parallel SDRAM device.
- Memory Expansion Modules Use as a parallel DRAM component for module-level or daughterboard memory expansion.
- High‑Temperature Electronics Suitable for systems that require operation across −40°C to 105°C.
Unique Advantages
- 128 Mbit, 8M × 16 Organization: Provides a defined memory capacity and organization for straightforward addressing and system integration.
- High Clock Rating: 143 MHz clock frequency supports higher-speed parallel memory operations within supplied timing specs.
- Low Access Time: 5.4 ns access time helps reduce latency for read/write cycles.
- Wide Voltage Range: 3.0 V–3.6 V operation accommodates common 3 V system supplies.
- Industry-Standard Package: 54‑TSOP II package (0.400", 10.16 mm width) simplifies mechanical and PCB design.
- Wide Operating Temperature: −40°C to 105°C rating supports a broad set of environmental requirements.
Why Choose IS45S16800F-7CTLA2-TR?
The IS45S16800F-7CTLA2-TR delivers a compact, board-friendly 128 Mbit parallel SDRAM solution with defined timing and voltage characteristics. Its 8M × 16 organization, 143 MHz clock frequency, and 5.4 ns access time make it suitable for designs that need predictable parallel DRAM behavior in a standard 54‑TSOP II package.
This device is appropriate for engineers and procurement teams specifying parallel SDRAM where a 3.0 V–3.6 V supply, a small TSOP footprint, and an extended operating temperature range are required. Manufactured by Integrated Silicon Solution Inc., it offers a specification set aimed at straightforward integration into legacy and new parallel-memory designs.
Request a quote or submit an inquiry to evaluate IS45S16800F-7CTLA2-TR for your next design.
