IS45S16800F-7CTLA2

IC DRAM 128MBIT PAR 54TSOP II
Part Description

IC DRAM 128MBIT PAR 54TSOP II

Quantity 1,034 Available (as of May 6, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package54-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size128 MbitAccess Time5.4 nsGradeAutomotive
Clock Frequency143 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 105°C (TA)Write Cycle Time Word PageN/APackaging54-TSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization8M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of IS45S16800F-7CTLA2 – 128 Mbit SDRAM, Parallel, 54-TSOP II

The IS45S16800F-7CTLA2 from ISSI is a 128 Mbit volatile SDRAM organized as 8M x 16 with a parallel memory interface. It is supplied in a 54-TSOP II package (0.400", 10.16 mm width) and is designed for applications that require on-board parallel DRAM capacity with standard SDRAM timing and signaling.

Key characteristics include a 143 MHz maximum clock frequency, 5.4 ns access time, 3.0 V–3.6 V supply range, and an extended ambient operating temperature range of -40°C to 105°C (TA), making it suitable for systems requiring moderate speed and wide-temperature operation.

Key Features

  • Memory Type — Volatile SDRAM in DRAM format, organized as 8M x 16 for 128 Mbit total capacity.
  • Performance — Rated for a clock frequency up to 143 MHz with an access time of 5.4 ns for predictable read/write timing.
  • Interface — Parallel memory interface suitable for designs using standard SDRAM signaling and pin-out conventions.
  • Power — Nominal supply range of 3.0 V to 3.6 V, compatible with 3.3 V system rails.
  • Package — 54-TSOP II package (0.400" / 10.16 mm width) in a standard supplier device package footprint for compact board mounting.
  • Temperature Range — Operating ambient temperature from -40°C to 105°C (TA) for extended-environment use.

Typical Applications

  • Embedded systems — Provides parallel SDRAM working memory where 128 Mbit capacity and standard SDRAM timing are required.
  • Industrial electronics — Suitable for systems that require extended ambient operation up to 105°C and 3.3 V power domains.
  • Legacy parallel-memory designs — Fits designs that use a parallel DRAM interface and a 54-TSOP II package footprint.

Unique Advantages

  • 128 Mbit density in a compact package: 8M x 16 organization delivers significant on-board DRAM capacity in a 54-TSOP II footprint.
  • Deterministic SDRAM timing: 143 MHz clock rating and 5.4 ns access time provide clear performance parameters for system timing design.
  • Wide operating temperature: -40°C to 105°C (TA) supports designs operating in extended-temperature environments.
  • 3.0 V–3.6 V supply compatibility: Matches common 3.3 V system rails for straightforward power integration.
  • Standard TSOP package: 54-TSOP II (10.16 mm width) enables integration into established board layouts and manufacturing processes.

Why Choose IS45S16800F-7CTLA2?

The IS45S16800F-7CTLA2 positions itself as a straightforward, specification-driven parallel SDRAM option for designs that need 128 Mbit of volatile DRAM in a compact 54-TSOP II package. With defined performance (143 MHz clock, 5.4 ns access) and a wide operating temperature range, it is suited for embedded and industrial applications that require predictable memory behavior and compatibility with 3.3 V power domains.

Engineers specifying this device can rely on its clear electrical and mechanical parameters—memory organization, interface type, supply range, and package—when planning board layout, power architecture, and thermal budgeting, supporting robust integration and long-term maintainability.

Request a quote or contact sales to discuss availability, pricing, and lead times for the IS45S16800F-7CTLA2.

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