IS45S16800F-7TLA1
| Part Description |
IC DRAM 128MBIT PAR 54TSOP II |
|---|---|
| Quantity | 42 Available (as of May 6, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 128 Mbit | Access Time | 5.4 ns | Grade | Industrial | ||
| Clock Frequency | 143 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 8M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of IS45S16800F-7TLA1 – 128Mbit SDRAM, Parallel Interface, 54-TSOP II
The IS45S16800F-7TLA1 is a volatile SDRAM device providing 128 Mbit of parallel DRAM storage arranged as 8M × 16. It implements a parallel memory interface and is offered in a 54-TSOP II package.
Designed for systems that require low-latency parallel SDRAM, the device operates from a 3.0 V to 3.6 V supply, supports a 143 MHz clock rate, and offers an access time of 5.4 ns within an ambient temperature range of −40 °C to 85 °C.
Key Features
- Memory Type & Organization 128 Mbit SDRAM organized as 8M × 16, providing parallel DRAM storage.
- Performance Clock frequency rating of 143 MHz with an access time of 5.4 ns for low-latency memory access.
- Voltage Operates from a 3.0 V to 3.6 V supply.
- Operating Temperature Specified ambient range of −40 °C to 85 °C (TA).
- Package 54-TSOP (0.400", 10.16 mm width) in a 54-TSOP II supplier device package for compact board-level integration.
- Interface & Format Parallel memory interface; volatile DRAM format suitable for systems requiring temporary working memory.
Typical Applications
- System Memory Used as parallel SDRAM working memory in systems that require 128 Mbit of volatile storage.
- Buffer and Frame Storage Employed where parallel DRAM buffering or frame storage is needed with sub-6 ns access times.
- Embedded Memory Subsystems Integrated into embedded boards that accept 54-TSOP II packages and operate on a 3.0–3.6 V supply.
Unique Advantages
- Compact TSOP II Packaging 54-TSOP II package (0.400", 10.16 mm width) enables dense board layouts while preserving a parallel interface footprint.
- Fast Access Performance 5.4 ns access time combined with a 143 MHz clock rating supports low-latency memory operations.
- Wide Supply Voltage Window 3.0 V to 3.6 V operation offers flexibility across 3 V memory power rails.
- Extended Operating Temperature −40 °C to 85 °C ambient rating addresses applications requiring a broad temperature tolerance.
- Straightforward Parallel Interface Parallel DRAM format simplifies integration into designs that use parallel memory buses.
Why Choose IS45S16800F-7TLA1?
The IS45S16800F-7TLA1 combines a clear set of electrical and mechanical specifications—128 Mbit organization (8M × 16), 143 MHz clock support, 5.4 ns access time, and a compact 54-TSOP II package—that make it suitable for designs requiring reliable parallel SDRAM working memory. Its 3.0–3.6 V supply range and −40 °C to 85 °C ambient rating provide design flexibility across a range of board-level environments.
Choose this device when you need a verified 128 Mbit parallel SDRAM component with defined performance and packaging characteristics for straightforward integration and predictable behavior in your memory subsystem.
Request a quote or contact sales to discuss availability, lead times, and pricing for the IS45S16800F-7TLA1.