IS45S16800F-7TLA1

IC DRAM 128MBIT PAR 54TSOP II
Part Description

IC DRAM 128MBIT PAR 54TSOP II

Quantity 42 Available (as of May 6, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package54-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size128 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency143 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging54-TSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization8M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of IS45S16800F-7TLA1 – 128Mbit SDRAM, Parallel Interface, 54-TSOP II

The IS45S16800F-7TLA1 is a volatile SDRAM device providing 128 Mbit of parallel DRAM storage arranged as 8M × 16. It implements a parallel memory interface and is offered in a 54-TSOP II package.

Designed for systems that require low-latency parallel SDRAM, the device operates from a 3.0 V to 3.6 V supply, supports a 143 MHz clock rate, and offers an access time of 5.4 ns within an ambient temperature range of −40 °C to 85 °C.

Key Features

  • Memory Type & Organization  128 Mbit SDRAM organized as 8M × 16, providing parallel DRAM storage.
  • Performance  Clock frequency rating of 143 MHz with an access time of 5.4 ns for low-latency memory access.
  • Voltage  Operates from a 3.0 V to 3.6 V supply.
  • Operating Temperature  Specified ambient range of −40 °C to 85 °C (TA).
  • Package  54-TSOP (0.400", 10.16 mm width) in a 54-TSOP II supplier device package for compact board-level integration.
  • Interface & Format  Parallel memory interface; volatile DRAM format suitable for systems requiring temporary working memory.

Typical Applications

  • System Memory  Used as parallel SDRAM working memory in systems that require 128 Mbit of volatile storage.
  • Buffer and Frame Storage  Employed where parallel DRAM buffering or frame storage is needed with sub-6 ns access times.
  • Embedded Memory Subsystems  Integrated into embedded boards that accept 54-TSOP II packages and operate on a 3.0–3.6 V supply.

Unique Advantages

  • Compact TSOP II Packaging  54-TSOP II package (0.400", 10.16 mm width) enables dense board layouts while preserving a parallel interface footprint.
  • Fast Access Performance  5.4 ns access time combined with a 143 MHz clock rating supports low-latency memory operations.
  • Wide Supply Voltage Window  3.0 V to 3.6 V operation offers flexibility across 3 V memory power rails.
  • Extended Operating Temperature  −40 °C to 85 °C ambient rating addresses applications requiring a broad temperature tolerance.
  • Straightforward Parallel Interface  Parallel DRAM format simplifies integration into designs that use parallel memory buses.

Why Choose IS45S16800F-7TLA1?

The IS45S16800F-7TLA1 combines a clear set of electrical and mechanical specifications—128 Mbit organization (8M × 16), 143 MHz clock support, 5.4 ns access time, and a compact 54-TSOP II package—that make it suitable for designs requiring reliable parallel SDRAM working memory. Its 3.0–3.6 V supply range and −40 °C to 85 °C ambient rating provide design flexibility across a range of board-level environments.

Choose this device when you need a verified 128 Mbit parallel SDRAM component with defined performance and packaging characteristics for straightforward integration and predictable behavior in your memory subsystem.

Request a quote or contact sales to discuss availability, lead times, and pricing for the IS45S16800F-7TLA1.

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