IS45S16800F-7CTLA1-TR
| Part Description |
IC DRAM 128MBIT PAR 54TSOP II |
|---|---|
| Quantity | 1,340 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 128 Mbit | Access Time | 5.4 ns | Grade | Industrial | ||
| Clock Frequency | 143 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 8M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of IS45S16800F-7CTLA1-TR – IC DRAM 128MBIT PAR 54TSOP II
The IS45S16800F-7CTLA1-TR is a 128 Mbit volatile SDRAM organized as 8M × 16 with a parallel memory interface. It delivers high-speed DRAM access with a 143 MHz clock frequency and a 5.4 ns access time.
Packaged in a 54‑TSOP II (0.400", 10.16 mm width), the device operates from 3.0 V to 3.6 V and is specified for an ambient temperature range of −40 °C to 85 °C, making it suitable for systems that require compact, high-speed parallel SDRAM modules.
Key Features
- Memory Architecture Organized as 8M × 16 providing 128 Mbit of SDRAM in a parallel DRAM format for direct connection to parallel memory controllers.
- Performance 143 MHz clock frequency with 5.4 ns access time for responsive memory reads and writes in timing-sensitive designs.
- Voltage Operates from 3.0 V to 3.6 V to match common 3 V-class system rails.
- Package 54‑TSOP II (0.400", 10.16 mm width) surface-mount package for compact board-level integration.
- Operating Temperature Specified for −40 °C to 85 °C (TA) to support temperature-tolerant applications.
- Memory Type Volatile SDRAM intended for high-speed, temporary data storage in embedded and system-level designs.
Typical Applications
- Parallel memory expansion Adds 128 Mbit of SDRAM capacity to systems that use a parallel DRAM interface and require compact packaging.
- Embedded systems Provides high-speed volatile storage for embedded controllers and modules operating on 3.0–3.6 V rails across −40 °C to 85 °C.
- Board-level replacements and upgrades Fits designs that accept a 54‑TSOP II packaged SDRAM for retrofits or component substitutions.
Unique Advantages
- Compact TSOP II form factor: 54‑pin TSOP II reduces board footprint while offering a standard 10.16 mm width profile for layout consistency.
- Parallel SDRAM interface: Simplifies integration with existing parallel memory controllers without requiring serial bridge logic.
- Predictable timing: 143 MHz clock and 5.4 ns access time provide clear performance parameters for system timing design.
- 3 V-class compatibility: 3.0–3.6 V supply range aligns with common system power rails.
- Wide temperature range: −40 °C to 85 °C ambient rating supports deployment in temperature-varying environments.
Why Choose IC DRAM 128MBIT PAR 54TSOP II?
The IS45S16800F-7CTLA1-TR combines 128 Mbit SDRAM capacity, a parallel memory interface, and a compact 54‑TSOP II package to deliver a straightforward, board-level volatile memory option. Its electrical and thermal specifications—3.0–3.6 V operation and −40 °C to 85 °C ambient rating—make it appropriate for designs that require reliable, high-speed parallel DRAM in a small footprint.
This device is well suited to engineers and procurement teams specifying parallel-interface SDRAM where predictable timing, compact packaging, and 3 V-class supply compatibility are key selection criteria.
Request a quote or submit an inquiry for pricing and availability for the IS45S16800F-7CTLA1-TR to discuss quantities, lead times, and technical details.
