IS45S16800J-6BLA1

The IS45S16800J-6BLA1 is a 128 Mbit SDRAM organized as 8M × 16 in a 54-TFBGA (8×8) package. It provides high-speed volatile memory with a LVTTL memory interface and a 166 MHz clock frequency for systems that require synchronous DRAM performance.

This device targets board-level memory expansion where a compact package, defined voltage range, and extended operating temperature are required. Key value comes from its supported clock frequency, access time, and package density to enable higher-throughput buffering and storage within constrained PCB space.

Key Features

• Memory Type & Organization 128 Mbit SDRAM organized as 8M × 16, providing a standard DRAM memory format for system memory expansion.
• Performance Supports a 166 MHz clock frequency with an access time of 5.4 ns to support synchronous data transfers at that operating frequency.
• Interface LVTTL memory interface for signal compatibility with LVTTL-based memory controllers and logic.
• Power Supply voltage range of 3.0 V to 3.6 V to match common 3 V memory power rails.
• Package 54-TFBGA (8×8) supplier device package, offering a compact surface-mount footprint for dense board designs.
• Operating Temperature Rated for −40°C to 85°C (TA), supporting applications that require extended ambient temperature range.
• Volatile Memory DRAM (volatile) storage intended for temporary data buffering and working memory in electronic systems.

Typical Applications

• Board-level Memory Expansion Use as on-board SDRAM where a 128 Mbit, 8M × 16 memory is required for system volatile storage.
• High-speed Buffering Suitable for designs requiring synchronous DRAM at up to 166 MHz for buffering and transient data storage.
• Compact PCB Designs Fits compact layouts that benefit from the 54-TFBGA (8×8) package footprint.
• Extended Temperature Systems Applicable to equipment operating across −40°C to 85°C ambient conditions.
• 3.0 V Memory Rail Designs Designed for systems using a 3.0–3.6 V supply for memory subsystems.

Unique Advantages

• Standard SDRAM Organization: 8M × 16 configuration provides predictable addressing and integration with controllers designed for this memory geometry.
• High-Frequency Operation: 166 MHz clock capability combined with a 5.4 ns access time supports responsive synchronous memory transactions.
• Compact BGA Packaging: 54-TFBGA (8×8) package reduces PCB area while maintaining ball-grid connectivity for reliable board mounting.
• Wide Supply Range: 3.0–3.6 V operation offers flexibility for systems with nominal 3.3 V memory rails and tolerance for supply variation.
• Extended Temperature Rating: −40°C to 85°C rating enables use in environments with wide ambient temperature swings.
• LVTTL Interface: LVTTL signaling simplifies interfacing with LVTTL-compatible memory controllers and logic families.

Why Choose IC DRAM 128MBIT PAR 54TFBGA?

The IS45S16800J-6BLA1 positions itself as a straightforward, specification-driven SDRAM option for designs requiring 128 Mbit of volatile memory in a compact 54-TFBGA package. Its 8M × 16 organization, 166 MHz clock capability, and 5.4 ns access time provide the performance characteristics needed for synchronous buffering and working memory.

This device is well suited for engineers and procurement teams building systems that need a defined voltage range (3.0–3.6 V), LVTTL interfacing, and an extended operating temperature window. Its combination of density, package footprint, and electrical specs supports integration into constrained board designs that require reliable DRAM capacity.

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