IS45S16800E-7BLA2

The IS45S16800E-7BLA2 is a 128 Mbit synchronous DRAM (SDRAM) organized as 8M × 16 with a fully synchronous, pipelined architecture. It provides parallel memory access with programmable burst operation and CAS latency options for deterministic, clock-referenced data transfers.

Designed for systems that require a compact, high-speed volatile memory device, this SDRAM offers selectable performance modes, internal bank architecture for row access/precharge hiding, and a compact 54-ball TFBGA package suitable for space-constrained boards.

Key Features

• Core & Architecture  Quad-bank SDRAM with pipelined operation; all inputs and outputs are referenced to the rising edge of the clock for fully synchronous operation.
• Memory Capacity & Organization  128 Mbit total capacity, organized as 8M × 16 bits (2,048K words × 16) to support parallel data paths.
• Performance  -7 speed grade with 143 MHz clock frequency and 5.4 ns access time (CAS latency = 3). Programmable CAS latency options of 2 or 3 clocks.
• Burst & Sequencing  Programmable burst length (1, 2, 4, 8, full page) and selectable burst sequence (sequential or interleave) for flexible transfer patterns.
• Refresh & Power Management  Auto Refresh (CBR) and Self Refresh support with specified refresh cycles (4096 cycles per refresh window dependent on grade) to maintain data integrity in volatile operation.
• Interface  Parallel memory interface with LVTTL-compatible signals and random column address every clock cycle for efficient read/write access.
• Voltage & Supply  VDD / VDDQ nominal 3.3 V with an operating supply range of 3.0 V to 3.6 V.
• Package & Mounting  54-ball TFBGA (8 × 8) compact package for surface-mount assembly.
• Operating Temperature  Extended ambient temperature range from −40°C to +105°C (TA) for temperature-tolerant applications.

Typical Applications

• High-speed system memory  Use where a fully synchronous SDRAM with 143 MHz operation and programmable CAS latency is required for deterministic data transfers.
• Embedded and industrial systems  Suited to boards operating across a wide ambient temperature range (−40°C to +105°C), providing reliable volatile storage in industrial environments.
• Memory subsystems and buffering  Programmable burst lengths and internal bank architecture make the device appropriate for parallel buffering and burst-oriented transfer patterns.

Unique Advantages

• Deterministic synchronous interface: All signals referenced to the positive clock edge for predictable timing across system designs.
• Flexible performance scaling: Selectable CAS latency (2 or 3) and multiple burst lengths enable trade-offs between throughput and latency.
• Efficient bank architecture: Internal quad-bank design hides row access/precharge latencies to improve effective throughput for burst accesses.
• Wide operating temperature: −40°C to +105°C rating supports deployment in thermally demanding environments.
• Compact BGA footprint: 54-ball TFBGA (8×8) reduces board area for space-constrained applications.

Why Choose IS45S16800E-7BLA2?

The IS45S16800E-7BLA2 combines a 128 Mbit SDRAM organization with a fully synchronous, pipelined architecture and programmable timing to deliver predictable, high-speed parallel memory operation. Its selectable CAS latency, burst control, and internal bank structure provide designers with configurable performance options to match system requirements.

With a 3.0 V–3.6 V supply range, LVTTL interface, and a compact 54-ball TFBGA package rated for −40°C to +105°C, this device is well suited to designs that need a compact, temperature-tolerant volatile memory solution with flexible timing and burst capabilities.

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