IS45S16800E-6TLA1-TR

The IS45S16800E-6TLA1-TR is a 128 Mbit synchronous DRAM (SDRAM) organized as 8M × 16 with a parallel memory interface. It implements a quad-bank, fully synchronous pipeline architecture with all signals referenced to the rising edge of the clock for predictable timing and high-speed transfers.

Designed for systems requiring 3.3V-class parallel SDRAM operation at up to 166 MHz, the device supports programmable burst lengths and sequences, selectable CAS latencies, and built-in refresh and power-saving modes to meet diverse memory buffering and temporary storage needs.

Key Features

• Memory Architecture  128 Mbit SDRAM organized as 8M × 16 (quad-bank) to support high-density parallel data storage.
• Synchronous Pipeline Operation  Fully synchronous design with all signals registered on the positive clock edge; pipeline architecture for high-speed data transfer.
• Performance  Clock frequency up to 166 MHz with an access time of 5.4 ns (CAS latency = 3) and programmable CAS latency options (2 or 3 clocks).
• Burst and Sequencing  Programmable burst lengths (1, 2, 4, 8, full page) and selectable burst sequence (Sequential/Interleave) for flexible data transfers.
• Refresh and Power Modes  Supports Auto Refresh (CBR) and Self Refresh; device supports 4,096 refresh cycles per 16 ms (A2 grade) or per 64 ms (A1 grade) as specified in the datasheet.
• Interface and I/O  LVTTL-compatible I/O and a parallel memory interface for standard system integration.
• Power  Operates from a 3.0 V to 3.6 V supply range (typical 3.3 V VDD/VDDQ) to match 3.3V memory systems.
• Package and Mounting  Supplied in a 54-pin TSOP II (0.400", 10.16 mm width) package for surface-mount applications.
• Operating Temperature  Specified operating ambient temperature range of -40 °C to +85 °C (TA).

Typical Applications

• High-speed buffering  Use as temporary high-bandwidth storage in systems requiring parallel SDRAM operation at up to 166 MHz.
• Embedded systems  Provides volatile main or local memory for embedded designs that require 128 Mbit SDRAM with selectable CAS latency and burst modes.
• Data acquisition and processing  Supports applications needing predictable synchronous reads/writes with programmable burst lengths and sequencing.

Unique Advantages

• Synchronous pipeline architecture: Enables high-speed, clock-referenced transfers with predictable timing behavior.
• Flexible burst control: Programmable burst lengths and sequences allow tailoring transfers to system access patterns and throughput needs.
• Selectable latency and timing: Programmable CAS latency (2 or 3) and documented access times (5.4 ns at CL=3) for latency/performance trade-offs.
• Standard 3.3V interface: Operates within a 3.0–3.6 V supply range (3.3 V typical) for compatibility with common memory systems.
• Compact surface‑mount package: 54-pin TSOP II footprint supports compact board designs while delivering 128 Mbit density.
• Built-in refresh and low-power modes: Auto Refresh and Self Refresh support reduce system-level power management complexity.

Why Choose IC DRAM 128MBIT PAR 54TSOP II?

The IS45S16800E-6TLA1-TR offers a balanced combination of density, synchronous pipeline performance, and interface flexibility for designs that require parallel SDRAM memory in a compact TSOP II package. With selectable CAS latency, programmable burst options, and standard 3.3V operation, it fits designs that need predictable timing and configurable transfer behavior.

Manufactured by Integrated Silicon Solution, Inc., the device is specified across a wide ambient temperature range and includes on-chip refresh and power-saving modes, providing durable, long-term memory capacity for embedded, buffering, and data-processing applications.

Please request a quote or submit an inquiry to obtain pricing, lead time, and availability for the IS45S16800E-6TLA1-TR.