IS45S32400B-6BLA1

The IS45S32400B-6BLA1 is a 128‑Mbit synchronous DRAM (SDRAM) organized as 4M × 32 with a quad‑bank architecture and a fully synchronous, pipeline interface. It provides high‑speed burst read/write operation with programmable CAS latency and burst length for predictable, clock‑referenced memory access.

Targeted for systems requiring a parallel SDRAM solution, the device supports clock frequencies up to 166 MHz, a nominal 3.3 V supply (specified range 3.0–3.6 V), and is available in a 90‑TFBGA (8×13) package with an industrial operating temperature range of −40 °C to 85 °C.

Key Features

• Memory Organization — 128 Mbit formatted as 4M × 32 with 4 internal banks, providing structured, bank‑interleaved access.
• Synchronous SDRAM Core — Fully synchronous operation with all signals referenced to the positive clock edge and pipeline architecture for high throughput.
• Clocking and Timing — Supports clock frequencies of 166, 143, 125, and 100 MHz; access time from clock down to 5.4 ns (CAS‑latency = 3 for -6 speed grade).
• Programmable Burst and Latency — Programmable burst lengths (1, 2, 4, 8, full page) and burst sequences (sequential/interleave); CAS latency selectable at 2 or 3 clocks.
• Refresh and Power Modes — Auto Refresh (CBR), Self Refresh with programmable refresh periods, and support for 4096 refresh cycles every 64 ms to maintain data integrity.
• Interface — LVTTL‑compatible signals and parallel memory interface enabling random column address every clock cycle and burst termination via burst stop/precharge commands.
• Supply and Packaging — Nominal 3.3 V operation (supply range 3.0–3.6 V) with VDD/VDDQ at 3.3 V in datasheet; available in a 90‑ball TFBGA (8×13) package.
• Environmental Range — Specified operating temperature range of −40 °C to 85 °C (TA), available in industrial temperature grade.

Unique Advantages

• Deterministic, high‑speed access: Synchronous, clock‑referenced operation with selectable CAS latency and up to 166 MHz clocking enables timing predictability for burst transfers.
• Flexible burst control: Programmable burst lengths and sequences allow tuning of transfer behavior for sequential or interleaved access patterns.
• Bank interleaving for throughput: Four internal banks permit overlapping of row precharge and activation to reduce access latency during random and burst operations.
• Robust refresh management: Auto and self‑refresh modes with 4096 cycles per 64 ms ensure data retention while supporting power‑saving modes.
• Industrial temperature support: Specified −40 °C to 85 °C operation supports deployment in temperature‑sensitive environments.
• Compact BGA package: 90‑TFBGA (8×13) package provides a board‑space conscious footprint for high‑density system designs.

Why Choose IC DRAM 128MBIT PAR 90TFBGA?

The IS45S32400B-6BLA1 delivers a synchronous, parallel DRAM solution that balances high‑speed burst capability with flexible timing and refresh controls. Its 4M × 32 organization, programmable burst and CAS settings, and banked architecture make it suitable for designs that require deterministic memory timing and efficient data throughput.

This device is suitable for system designs that require a 128‑Mbit SDRAM in a compact 90‑TFBGA package and an industrial operating range, offering scalability for applications that need predictable, clocked memory behavior and standard LVTTL interfacing.

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