IS45S32400B-7BLA1

The IS45S32400B-7BLA1 is a 128‑Mbit synchronous DRAM organized as 4M × 32 with quad‑bank architecture and pipeline operation. It is a fully synchronous, parallel SDRAM device designed for high‑speed data transfer in systems that require a 128 Mbit volatile memory solution.

Specified for operation from -40°C to 85°C and a supply range of 3.0 V to 3.6 V, this device targets applications that need programmable burst control, selectable CAS latency, and a compact 90‑TFBGA (8×13) package footprint.

Key Features

• Core / Memory Organization 128 Mbit SDRAM organized as 4M × 32 with four internal banks for interleaved access and hidden row precharge.
• Performance / Timing Supports clock frequencies for the -7 speed grade (143 MHz) with an access time from clock of 5.4 ns and programmable CAS latency (2 or 3 clocks).
• Burst and Access Control Programmable burst lengths (1, 2, 4, 8, full page) and burst sequence (sequential/interleave) with burst read/write and burst read/single write capability; burst termination via stop or auto precharge.
• Refresh and Power Modes Auto Refresh and Self Refresh modes with programmable refresh periods and 4096 refresh cycles every 64 ms for retained data integrity during standby.
• Interface Fully synchronous LVTTL‑referenced interface with random column addressing every clock cycle and all signals registered on the rising clock edge.
• Power Operates from 3.0 V to 3.6 V (VDD / VDDQ), suitable for 3.3 V memory systems.
• Package & Temperature Supplied in a 90‑ball TFBGA (8×13) package and specified for industrial temperature operation from -40°C to 85°C; available in lead‑free variants.

Typical Applications

• Embedded memory subsystems — Use as onboard synchronous DRAM for systems requiring a 128 Mbit parallel SDRAM interface and predictable burst performance.
• Industrial equipment — Suitable for designs that require operation across an extended temperature range (‑40°C to 85°C) with synchronous refresh and power‑down modes.
• Memory module and board designs — Fits compact 90‑TFBGA layouts for space‑constrained PCBs needing 4M × 32 memory organization and banked operation.

Unique Advantages

• Flexible timing options: Selectable CAS latency (2 or 3 clocks) and multiple speed grades provide timing flexibility to match system requirements.
• High‑speed synchronous operation: Pipeline architecture and a 143 MHz speed grade deliver low access latency (5.4 ns from clock) for burst‑oriented transfers.
• Programmable burst control: Multiple burst lengths and sequence modes enable optimized read/write patterns and efficient column access.
• Banked architecture for hidden precharge: Internal quad‑bank configuration allows precharging one bank while accessing another to reduce effective access overhead.
• Industrial temperature support: Rated for -40°C to 85°C operation for applications that require extended environmental range.
• Compact BGA package: 90‑TFBGA (8×13) package offers a small board footprint for dense PCB layouts.

Why Choose IS45S32400B-7BLA1?

The IS45S32400B-7BLA1 combines a 4M × 32 quad‑bank architecture with fully synchronous pipeline operation to provide a reliable 128‑Mbit DRAM building block for systems that need predictable burst performance and flexible timing control. Its support for programmable burst lengths, selectable CAS latencies, and standard LVTTL synchronous interfacing makes it suitable for designs requiring deterministic memory access patterns.

Offered in a 90‑TFBGA package and specified for industrial temperatures with a 3.0 V–3.6 V supply window, this device addresses applications where compact form factor, timing flexibility, and industrial operating range are primary considerations.

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