IS45S32400B-6TLA1

The IS45S32400B-6TLA1 is a 128‑Mbit synchronous DRAM organized as 4M × 32 with a quad‑bank architecture and fully synchronous, pipeline operation. Designed for high‑speed data transfer, the device implements internal bank interleaving and registered input/output referenced to the positive clock edge to support burst‑oriented memory accesses.

Delivered in an 86‑pin TSOP‑II package with industrial temperature availability, this parallel SDRAM targets systems requiring deterministic synchronous memory behavior, programmable burst and CAS settings, and power‑management features such as auto and self‑refresh.

Key Features

• Memory Core & Organization  128 Mbit SDRAM organized as 4M × 32 with four internal banks to support interleaved accesses and hide precharge cycles.
• Clock & Timing  Supports clock frequencies up to 166 MHz (also available at 143, 125, 100 MHz). Programmable CAS latency of 2 or 3 clocks; access time from clock is 5.4 ns at CAS‑3.
• Burst & Access Modes  Programmable burst lengths (1, 2, 4, 8, full page) and selectable burst sequence (sequential or interleave). Supports burst read/write and burst read/single write operations with burst termination and auto‑precharge options.
• Refresh & Power Management  Auto Refresh and Self Refresh modes with programmable refresh periods; 4096 refresh cycles every 64 ms. Includes power‑down and self‑timed precharge features.
• Interface  LVTTL‑compatible inputs and a parallel memory interface for random column address changes every clock cycle.
• Supply & Packaging  Voltage supply range 3.0 V to 3.6 V (datasheet references VDD/VDDQ at 3.3 V). Available in 86‑TSOP II (86‑TFSOP, 0.400", 10.16 mm width) and other package options.
• Operating Temperature  Industrial temperature range from −40°C to 85°C is supported (TA).

Unique Advantages

• High‑speed synchronous operation: Clock support up to 166 MHz and pipeline architecture enable high throughput for burst memory transfers.
• Flexible latency and burst control: Programmable CAS latency (2 or 3) and multiple burst lengths/sequences let designers tune performance vs. access patterns.
• Quad‑bank architecture: Internal bank interleaving and auto/precharge capabilities reduce effective row access overhead and support seamless random accesses.
• Robust refresh and power modes: Auto and self‑refresh with defined refresh cycles (4096/64 ms) and power‑down options help manage data retention and power consumption.
• Industrial temperature and standard package: −40°C to 85°C rating and 86‑TSOP II packaging simplify integration into temperature‑sensitive and space‑constrained designs.

Why Choose IS45S32400B-6TLA1?

The IS45S32400B-6TLA1 combines a synchronous, pipeline SDRAM architecture with programmable burst and latency options to deliver deterministic, high‑speed memory behavior. Its quad‑bank organization and bank interleaving are aimed at systems that require efficient burst transfers and reduced row‑precharge impact.

With support for industrial temperatures, LVTTL interface compatibility, standard 86‑TSOP II packaging, and on‑die refresh/power modes, this 128‑Mbit SDRAM is suitable for designs that need configurable performance, robust refresh management, and reliable operation across a wide operating temperature range.

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