IS45S32400E-6BLA1

The IS45S32400E-6BLA1 is a 128Mbit synchronous DRAM organized as 4M × 32 with a quad-bank architecture and pipeline operation for high-speed data transfer. It is a parallel-interface SDRAM designed for 3.3V memory systems and references all input/output signals to the rising edge of the clock.

This device is targeted at systems that require a compact 128Mbit SDRAM in a 90‑TFBGA (8×13) package with programmable burst modes, LVTTL signaling, and industrial operating temperature capability.

Key Features

• Core & Architecture  Quad-bank, pipeline SDRAM organized as 4M × 32 (128Mbit) to support continuous high-speed access and internal bank management for row access/precharge hiding.
• Clock & Timing  Supports a 166 MHz clock frequency for the -6 device; programmable CAS latency (2 or 3 clocks). CAS latency = 3 yields an access time from clock of 5.4 ns.
• Memory & Burst  Programmable burst length (1, 2, 4, 8, full page) and selectable burst sequence (sequential or interleave) with burst read/write and burst termination features.
• Refresh & Reliability  Auto Refresh (CBR) and Self Refresh supported; refresh rate options include 4096 cycles per 16 ms (A2) or 64 ms (Commercial/Industrial/A1) as defined in the device options.
• Interface & Signaling  Parallel SDRAM interface with LVTTL-compatible I/O signaling referenced to the positive clock edge for synchronous operation.
• Power  Single power supply operation at 3.3 V (specified 3.0 V to 3.6 V), simplifying supply design for 3.3V systems.
• Package & Temperature  90‑TFBGA (8×13) ball grid array package; specified operating temperature range of -40°C to +85°C (TA).

Typical Applications

• Parallel SDRAM memory subsystems  Fits designs that require a 128Mbit synchronous DRAM with a parallel LVTTL interface and programmable burst operation.
• High-speed buffering  Suitable for buffering and temporary data storage where 166 MHz clock operation and low CAS latency (5.4 ns at CL=3) are required.
• Industrial electronics  Usable in equipment operating across an extended ambient range (−40°C to +85°C) that requires reliable synchronous DRAM.

Unique Advantages

• High-frequency operation: Enables 166 MHz clocking (‑6 option) to support faster data throughput in synchronous designs.
• Low access latency: CAS latency = 3 provides an access time from clock of 5.4 ns for responsive read operations.
• Flexible burst control: Programmable burst lengths and sequence modes allow optimization of transfer patterns for varying workload types.
• Single 3.3V supply: Operates from 3.0 V to 3.6 V, aligning with standard 3.3V memory system rails.
• Compact BGA package: 90‑TFBGA (8×13) package offers a space-efficient footprint for board-level integration.
• Defined refresh options: Supports Auto and Self Refresh with documented refresh-cycle timing for system-level memory maintenance.

Why Choose IS45S32400E-6BLA1?

The IS45S32400E-6BLA1 provides a straightforward, specification-driven SDRAM solution for designers needing a 128Mbit parallel SDRAM with predictable timing and refresh behavior. Its 4M × 32 organization, programmable burst modes, and 166 MHz capability (‑6 device) make it suitable for systems that demand synchronous, low-latency memory operation on a 3.3V rail.

This device is well suited for engineering teams implementing compact, industrial-temperature memory subsystems where package density, configurable burst behavior, and clearly defined timing (including CAS latency and access time) are required for system validation and integration.

For pricing, availability, or to request a formal quote for IS45S32400E-6BLA1, please request a quote or contact sales for assistance.