IS45S32400E-6TLA1-TR

The IS45S32400E-6TLA1-TR is a 128Mbit synchronous DRAM (SDRAM) organized as 4M × 32 with four internal banks and a parallel memory interface. Built on a pipelined, fully synchronous architecture with LVTTL signaling, it is intended for high-speed memory subsystems that require predictable, clock-referenced data transfers.

This device targets designs operating from a 3.3V supply (3.3V ±0.3V / 3.0–3.6V) and supports industrial temperature operation to –40°C to +85°C in an 86‑pin TSOP-II package, balancing performance, integration density and package compactness.

Key Features

• Memory Architecture  128Mbit SDRAM organized as 4M × 32 with 4 internal banks for improved access concurrency and pipelined operation.
• Performance  Clock-frequency options up to 166 MHz with an access time from clock of 5.4 ns (CAS latency = 3) for high-speed data throughput.
• Programmable Timing & Burst  Programmable CAS latency (2 or 3 clocks), programmable burst lengths (1, 2, 4, 8, full page) and selectable burst sequence (sequential/interleave) for flexible timing and transfer modes.
• Refresh & Self-Refresh  Auto-Refresh and Self-Refresh support with 4,096 refresh cycles; refresh period selectable as 16 ms (A2 grade) or 64 ms (Commercial/Industrial/A1 grades) as specified.
• Interface & Signaling  Parallel memory interface with LVTTL-compatible I/O referenced to the positive clock edge for synchronous operation.
• Power  Single power supply operation: 3.3V ±0.3V (listed supply range 3.0–3.6V) for standard 3.3V memory systems.
• Package & Temperature  Available in an 86‑TSOP II (86‑TFSOP, 0.400", 10.16 mm width) package and rated for operation from –40°C to +85°C (TA) where specified.

Typical Applications

• Memory subsystems  Acts as synchronous DRAM storage in systems requiring 128Mbit parallel SDRAM with predictable clocked timing.
• High-speed buffering  Used where pipelined, banked SDRAM access and programmable burst transfers improve throughput for data buffering.
• Embedded 3.3V designs  Suited to embedded systems designed around a 3.3V memory VDD using LVTTL signaling and a parallel SDRAM interface.

Unique Advantages

• High-frequency operation: Supports up to 166 MHz clocking with low access time (5.4 ns at CAS‑3), enabling faster synchronous transfers.
• Flexible transfer modes: Programmable CAS latency, burst length and burst sequence allow tuning for a variety of access patterns and system timing requirements.
• Quad-bank architecture: Four internal banks provide improved concurrency and reduced row-precharge penalties for sustained data throughput.
• Standard 3.3V supply: Operates from 3.3V (3.0–3.6V range), simplifying integration into established 3.3V memory subsystems.
• Industrial temperature rating: Specified for –40°C to +85°C (TA) to support applications that require extended temperature operation.
• Compact TSOP-II package: 86‑pin TSOP-II (0.400", 10.16 mm width) reduces PCB area while providing a full 32‑bit data path.

Why Choose IC DRAM 128MBIT PAR 86TSOP II?

The IS45S32400E-6TLA1-TR delivers a synchronous, pipelined 128Mbit DRAM solution with programmable timing and burst capabilities for designers who need predictable, clocked memory behavior. Its 4M × 32 organization, quad-bank architecture and LVTTL interface make it suitable for 3.3V memory subsystems requiring parallel SDRAM at up to 166 MHz.

With industrial temperature coverage and an 86‑TSOP II package, this device is appropriate for compact boards and systems demanding robust, high-speed DRAM integration backed by ISSI’s product documentation and specification support.

Request a quote or contact sales to discuss availability, lead times and pricing for the IS45S32400E-6TLA1-TR.